scholarly journals Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 055927 ◽  
Author(s):  
N. Ohshima ◽  
H. Sato ◽  
S. Kanai ◽  
J. Llandro ◽  
S. Fukami ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Magnetization Switching ◽  
Nano Scale

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

2017 ◽  
Vol 50 (28) ◽  
pp. 285002 ◽  
Author(s):  
X P Zhao ◽  
J Lu ◽  
S W Mao ◽  
Z F Yu ◽  
H L Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Magnetic Field ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Magnetic Field Sensor ◽  
Field Sensor

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

Voltage-induced magnetization switching method utilizing dipole coupled magnetic tunnel junction

2020 ◽  
Vol 513 ◽  
pp. 167105
Author(s):  
Jiahao Liu ◽  
Lu Huang ◽  
Xiaokuo Yang ◽  
Cheng Li ◽  
Nuo Xu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Magnetization Switching ◽  
Switching Method
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