Island nucleation and growth with anomalous diffusion in one-dimension

2017 ◽  
Vol 146 (7) ◽  
pp. 074702 ◽  
Author(s):  
Ehsan H. Sabbar ◽  
Jacques G. Amar
Keyword(s):  
Anomalous Diffusion ◽  
Nucleation And Growth ◽  
One Dimension ◽  
Island Nucleation

Reversible island nucleation and growth with anomalous diffusion

2017 ◽  
Vol 664 ◽  
pp. 38-44 ◽  
Author(s):  
Ehsan H. Sabbar ◽  
Jacques G. Amar
Keyword(s):  
Anomalous Diffusion ◽  
Nucleation And Growth ◽  
Island Nucleation

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

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