Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells

2017 ◽  
Vol 110 (3) ◽  
pp. 031109 ◽  
Author(s):  
Ruslan Ivanov ◽  
Saulius Marcinkevičius ◽  
Tomas K. Uždavinys ◽  
Leah Y. Kuritzky ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Carrier Lifetimes ◽  
Ingan Quantum Wells

Multimode Scanning Near-Field Photoluminescence Spectroscopy of InGaN Quantum Wells

2018 ◽  
Author(s):  
Saulius Marcinkevicius ◽  
Mounir Mensi ◽  
Ruslan Ivanov ◽  
Leah Y. Kuritzky ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Ingan Quantum Wells

High resolution near-field spectroscopy investigation of tilted InGaN quantum wells

2003 ◽  
Vol 0 (7) ◽  
pp. 2674-2677 ◽  
Author(s):  
F. Hitzel ◽  
U. Ahrend ◽  
N. Riedel ◽  
U. Rossow ◽  
A. Hangleiter
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Near Field ◽  
Field Spectroscopy ◽  
Ingan Quantum Wells

scholarly journals Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence

2017 ◽  
Vol 7 (9) ◽  
pp. 3116 ◽  
Author(s):  
Tomas K. Uždavinys ◽  
Daniel L. Becerra ◽  
Ruslan Ivanov ◽  
Steven P. DenBaars ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Spatially Resolved ◽  
Ingan Quantum Wells

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

2014 ◽  
Vol 105 (11) ◽  
pp. 111108 ◽  
Author(s):  
S. Marcinkevičius ◽  
K. Gelžinytė ◽  
Y. Zhao ◽  
S. Nakamura ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Carrier Redistribution ◽  
Ingan Quantum Wells

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near-Field Optical Microscopy

2017 ◽  
Vol 255 (5) ◽  
pp. 1700322 ◽  
Author(s):  
Satoshi Kurai ◽  
Renma Mihara ◽  
Genki Nobata ◽  
Kohei Okawa ◽  
Narihito Okada ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Spatially Resolved ◽  
Spatially Resolved Spectroscopy ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells
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