Particle size-induced transition between surface segregation and bulk aggregation in a thin film of athermal polymer-nanoparticle blends

2017 ◽  
Vol 146 (1) ◽  
pp. 014904 ◽  
Author(s):  
Chih-Yu Teng ◽  
Yu-Jane Sheng ◽  
Heng-Kwong Tsao
Author(s):  
Bashir Khoda ◽  
AMM Nazmul Ahsan ◽  
SM Abu Shovon

Abstract Solid transfer technology from mixtures is gaining ever-increasing attention from materials scientists and production engineers due to their high potential in near net-shaped production of cost-effective engineering components. Dip coating, a wet deposition method, is an effective and straightforward way of thin-film/layers formation. The dipping mixtures are often embedded with inorganic fillers, nanoparticles, or clusters (d<30 nm) that produce a thin film ranging from nm to couple microns. An increase in the volume of solid transfer by the dipping process can open-up a novel 3D near-net-shape production. However, adding larger inorganic particle size (>1µm) or adding a higher solid fraction will increase the solid transfer but may result in a multi-phase heterogeneous mixture. In this work, the physical mechanism of an increased volume of solid transfer with a larger spherical particle size (>5 µm) is investigated. Polymer-based glue and evaporating solvent are mixed to construct the liquid carrier system (LCS). Moderate volume fraction of inorganic particles (20% < ?p < 50%) are added into the LCS solution as solid loading. Three levels of binder volume fraction are considered to investigate the effect of the solid transfer. Cylindrical AISI 304 steel wire with dia 0.81 mm is dipped and the coating thickness, weight, and the surface packing coverage by the particles are measured in our lab. The results presented the influence of volume fraction of inorganic particle and glue composition on the solid transfer from the heterogeneous mixture.


2001 ◽  
Vol 495 (3) ◽  
pp. 195-203 ◽  
Author(s):  
J Nyéki ◽  
Ch Girardeaux ◽  
Z Erdélyi ◽  
G.A Langer ◽  
G Erdélyi ◽  
...  

2018 ◽  
Vol 386 ◽  
pp. 250-255 ◽  
Author(s):  
Sergey Dubkov ◽  
Alexey Trifonov ◽  
Yuri Shaman ◽  
Evgeny Kitsyuk ◽  
Andrey Savitskiy ◽  
...  

This paper presents the results of experimental studies of arrays of Ag0.52Au0.48 alloy nanoparticles. Arrays were formed by vacuum-thermal evaporation on an unheated substrate and subsequent low-temperature vacuum annealing. The TEM images of the obtained nanoparticle arrays and corresponding histograms of particle size distribution are shown. The transmission spectra of these arrays showing the displacement of the plasma frequency as a function of the mean particle size are obtained. Spectra of Raman scattering from a thin film of amorphous carbon in presence of AgAu particles are obtained, and a comparative analysis of Raman scattering amplification factors for pure Ag, pure Au and Ag0.52Au0.48 alloy nanoparticles is presented.


Author(s):  
M. M. AHADIAN ◽  
A. IRAJI-ZAD ◽  
M. GHORANNEVISS ◽  
M. HANTIZADEH

2007 ◽  
Vol 142 (2-3) ◽  
pp. 62-68 ◽  
Author(s):  
S. Abhaya ◽  
G. Amarendra ◽  
G. Venugopal Rao ◽  
R. Rajaraman ◽  
B.K. Panigrahi ◽  
...  

2006 ◽  
Vol 21 (3) ◽  
pp. 623-631 ◽  
Author(s):  
S. Tripathi ◽  
R. Brajpuriya ◽  
C. Mukharjee ◽  
S.M. Chaudhari

The valence band (VB) photoemission supported by ultraviolet–visible–near infrared spectroscopy techniques were used to determine the band gap values of polycrystalline Si and Ge single layers as well as of Si/Ge multilayer structures. The band gap values obtained from VB photoemission measurements for these structures were found to be much larger than their corresponding bulks and to match well with those determined from standard optical absorption measurements. In each case, the VB offset values were obtained by considering the corresponding VB maximum as a reference. The increase in band gap in case of thin single layers of Si and Ge with respect to bulks were interpreted in terms of quantum confinement effect, while in case of multilayer sample, the effect of various factors such as (i) intermixing leading to the formation of SiGe alloy, (ii) roughness at the interface, (iii) particle size, and (iv) strain seem to play an important role in the observed change in band gap.


1988 ◽  
Vol 27 (10) ◽  
pp. 770-772
Author(s):  
A. S. Ivanov ◽  
S. A. Borisov

Sign in / Sign up

Export Citation Format

Share Document