scholarly journals Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

AIP Advances ◽  
2016 ◽  
Vol 6 (12) ◽  
pp. 125010 ◽  
Author(s):  
Sunghun Lee ◽  
Jung-Bong Park ◽  
Myoung-Jae Lee ◽  
John J. Boland
Keyword(s):  
Annealing Treatment ◽  
Zno Nanowire ◽  
Hydrogen Annealing

scholarly journals Synthesis of Vertically Aligned Dense ZnO Nanowires

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Lihong Gong ◽  
Xiang Wu ◽  
Huibo Chen ◽  
Fengyu Qu ◽  
Maozhong An
Keyword(s):  
Structural Analysis ◽  
Hydrothermal Method ◽  
Growth Mechanism ◽  
Annealing Treatment ◽  
Source Material ◽  
Zno Nanowires ◽  
Zno Nanowire ◽  
Single Crystalline ◽  
Post Annealing ◽  
Vertically Aligned

We reported the synthesis of vertically aligned dense ZnO nanowires using Zn powder as the source material by a hydrothermal method and a postannealing process at 200°C. The as-synthesized ZnO nanowires are 100–200 nm in diameter and several micrometers in length and each nanowire has a tapered tip. The morphologies of the products remain after post-annealing treatment. Structural analysis indicates the ZnO nanowire is single crystalline and grows along the [0001] direction. The possible growth mechanism for ZnO nanowire bundles is proposed.

Morphological transformations in solution-cast Styrene-Butadiene-Styrene (SBS) triblock copolymer thin films

1995 ◽  
Vol 53 ◽  
pp. 184-185
Author(s):  
Ginam Kim ◽  
W. Marsillo ◽  
M. Libera
Keyword(s):  
Thin Films ◽  
Triblock Copolymer ◽  
Annealing Treatment ◽  
Minor Component ◽  
Solvent Evaporation ◽  
Single Crystal Substrate ◽  
Transparent Films ◽  
Crystal Substrate ◽  
Solution Cast ◽  
Morphological Transformations

The fact that block copolymers can assume a range of morphologies depending upon such variables as relative block length and molecular weight is now well known. In the case of poly(styrene)[PS]-poly(butadiene)[PB]-poly(styrene) (SBS) triblock copolymer, the morphologies range from spheres (roughly ~20% minor component), to cylinders (roughly 20%~35% minor component), to lamellae (roughly equal component fractions) Most recently, there has been increasing interest in transformations between morphologies by thermal annealing. This paper describes initial results studying the effect of solvent evaporation rate and post-casting annealing treatment on the morphology of SBS thin films.TEM specimens were prepared by solution casting electron transparent films. 50 μl of 0.1 wt% SBS (30% styrene, Mw=14,000, Scientific Polymer Products, Inc.) dissolved in toluene was deposited on a polished NaCl single crystal substrate placed in a small dish. After solvent evaporation the film was cut into small squares, floated from the salt in water, and each square was collected on a Cu grid.

The microstructure change of low-carbon electrical steels by residual aluminum

1989 ◽  
Vol 47 ◽  
pp. 286-287
Author(s):  
C.K. Hou ◽  
C.T. Hu ◽  
Sanboh Lee
Keyword(s):  
Annealing Treatment ◽  
Low Carbon ◽  
Electrical Steels ◽  
Vacuum Degassing ◽  
Spherical Inclusions ◽  
Residual Aluminum ◽  
Average Grain Size ◽  
The Matrix ◽  
Fine Size ◽  
To Come

The fully processed low-carbon electrical steels are generally fabricated through vacuum degassing to reduce the carbon level and to avoid the need for any further decarburization annealing treatment. This investigation was conducted on eighteen heats of such steels with aluminum content ranging from 0.001% to 0.011% which was believed to come from the addition of ferroalloys.The sizes of all the observed grains are less than 24 μm, and gradually decrease as the content of aluminum is increased from 0.001% to 0.007%. For steels with residual aluminum greater than 0. 007%, the average grain size becomes constant and is about 8.8 μm as shown in Fig. 1. When the aluminum is increased, the observed grains are changed from the uniformly coarse and equiaxial shape to the fine size in the region near surfaces and the elongated shape in the central region. SEM and EDAX analysis of large spherical inclusions in the matrix indicate that silicate is the majority compound when the aluminum propotion is less than 0.003%, then the content of aluminum in compound inclusion increases with that in steel.

Characterisation of planar crystal defects in Y2Fe17Cx (0.6 ≤ x ≤ 1.6) magnetic material by High Resolution Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 774-775
Author(s):  
W. Coene ◽  
F. Hakkens ◽  
T.H. Jacobs ◽  
K.H.J. Buschow
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Permanent Magnets ◽  
Annealing Treatment ◽  
High Resolution Electron Microscopy ◽  
Crystal Defects ◽  
Ordered Structure ◽  
X Ray ◽  
Planar Crystal ◽  
Resolution Electron

Intermetallic compounds of the type RE2Fe17Cx (RE= rare earth element) are promising candidates for permanent magnets. In case of Y2Fe17Cx, the Curie temperature increases from 325 K for x =0 to 550 K for x = 1.6 . X ray and electron diffraction reveal a carbon - induced structural transformation in Y2Fe17Cx from the hexagonal Th2Ni17 - type (x < 0.6 ) to the rhombohedral Th2Zn17 - type ( x ≥ 0.6). Planar crystal defects introduce local sheets of different magnetic anisotropy as compared with the ordered structure, and therefore may have an important impact on the coercivivity mechanism .High resolution electron microscopy ( HREM ) on a Philips CM30 / Super Twin has been used to characterize planar crystal defects in rhombohedral Y2Fe17Cx ( x ≥ 0.6 ). The basal plane stacking sequences are imaged in the [100] - orientation, showing an ABC or ACB sequence of Y - atoms and Fe2 - dumbbells, for both coaxial twin variants, respectively . Compounds resulting from a 3 - week annealing treatment at high temperature ( Ta = 1000 - 1100°C ) contain a high density of planar defects.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

CARPENTER HY-RA 80

Alloy Digest ◽  
1970 ◽  
Vol 19 (6) ◽  
Keyword(s):  
Physical Properties ◽  
Heat Treating ◽  
Molybdenum Alloy ◽  
Magnetic Characteristics ◽  
Hydrogen Annealing ◽  
Nickel Iron

Abstract Carpenter Hy-Ra 80 is a nickel-iron-molybdenum alloy specially processed to exhibit square hystereris loop properties. It is recommended for tape wound toroids which will show specific magnetic characteristics after hydrogen annealing. This datasheet provides information on composition and physical properties. It also includes information on heat treating. Filing Code: Ni-158. Producer or source: Carpenter.

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