Voltage-controlled magnetization switching in MRAMs in conjunction with spin-transfer torque and applied magnetic field

2016 ◽  
Vol 120 (20) ◽  
pp. 203902 ◽  
Author(s):  
Kamaram Munira ◽  
Sumeet C. Pandey ◽  
Witold Kula ◽  
Gurtej S. Sandhu
Keyword(s):  
Magnetic Field ◽  
Applied Magnetic Field ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetization Switching

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Field Dependence of Switching Currents in an Exchange Biased Spin Valve

2007 ◽  
Vol 7 (1) ◽  
pp. 344-349
Author(s):  
Hoang Yen Thi Nguyen ◽  
Sung-Jung Joo ◽  
Kuyoul Jung ◽  
Kyung-Ho Shin
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Spin Valve ◽  
Spin Transfer Torque ◽  
Information Storage ◽  
Spin Transfer ◽  
Field Range ◽  
Higher Spin ◽  
Thermal Magnetization ◽  
Negative Field

Current induced magnetic reversal due to spin transfer torque is a promising candidate in advanced information storage technology. It has been intensively studied. This work reports the field-dependence of switching-currents for current induced magnetization switching in a uncoupled nano-sized cobalt-based spin valve of exchange biased type. The dependency is investigated in hysteretic regime at room temperature, in comparison with that of a trilayer simple spin valve. In the simple spin valve, the switching currents behave to the positive and the negative applied magnetic field symmetrically. In the exchange biased type, in contrast, the switching currents respond to the negative field in a quite unusual and different manner than to the positive field. A negative magnetic field then can shift the switching-currents into either negative or positive current range, dependently on whether a parallel or an antiparallel state of the spin valve was produced by that field. This different character of switching currents in the negative field range can be explained by the effect of the exchange bias pinning field on the spin-polarizer (the fixed Co layer) of the exchange biased spin valve. That unidirectional pinning filed could suppress the thermal magnetization fluctuation in the spin-polarizer, leading to a higher spin polarization of the current, and hence a lower switching current density than in the simple spin valve.

scholarly journals Shaped angular dependence of the spin-transfer torque and microwave generation without magnetic field

2007 ◽  
Vol 3 (7) ◽  
pp. 492-497 ◽  
Author(s):  
O. Boulle ◽  
V. Cros ◽  
J. Grollier ◽  
L. G. Pereira ◽  
C. Deranlot ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Microwave Generation
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