Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures

2016 ◽  
Vol 109 (18) ◽  
pp. 181105 ◽  
Author(s):  
Farsane Tabataba-Vakili ◽  
Thomas Wunderer ◽  
Michael Kneissl ◽  
Zhihong Yang ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
Radiative Recombination ◽  
Deep Uv ◽  
Multi Quantum Well

scholarly journals Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping

AIP Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 075104 ◽  
Author(s):  
Sung Tae Yoo ◽  
Byeongchan So ◽  
Hye In Lee ◽  
Okhyun Nam ◽  
Kyu Chang Park
Keyword(s):  
Electron Beam ◽  
Carbon Nanotube ◽  
Quantum Well ◽  
Ultraviolet Light ◽  
Large Area ◽  
Deep Ultraviolet ◽  
Multi Quantum Well

Evidence of Sequential Carrier Escape in III-V p-i-n Multi-Quantum Well Solar Cells

2007 ◽  
Vol 1031 ◽  
Author(s):  
Andenet Alemu ◽  
Jose A. H. Coaquira ◽  
Alex Freundlich
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Potential ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Photoluminescence Intensity ◽  
Carrier Escape ◽  
Multi Quantum Well

AbstractSeveral InAsP/InP p-i-n Multi-Quantum Well (MQW) solar cells, only differing by their MQW region composition and geometry, were investigated. For each sample, the Arrhenius plot of the temperature related variation of the photoluminescence intensity was used to deduce the radiative recombination activation energy. The electron and holes confinement energy levels in the quantum wells and the associated effective potential barriers seen by each carrier were theoretically calculated. Carrier escape times were also estimated for each carrier. The fastest escaping carrier is found to display an effective potential energy barrier equal to the experimentally determined photoluminescence activation energy. This not only shows that the temperature related radiative recombination extinction process is driven by the carrier escape mechanism but also that the carriers escape process is sequential. Moreover, a discrepancy in device performance is directly correlated to the nature of the fastest escaping carrier.

Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

1993 ◽  
Vol 88 (11-12) ◽  
pp. 943-946
Author(s):  
C. Weisbuch ◽  
R.C. Miller ◽  
R. Dingle ◽  
A.C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Quantum States ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Optimization and performance of AlGaN-based multi-quantum-well deep-UV LEDs

2004 ◽  
Author(s):  
Mary H. Crawford ◽  
Andrew A. Allerman ◽  
Arthur J. Fischer ◽  
Katherine H. A. Bogart ◽  
Stephen R. Lee ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Uv ◽  
And Performance ◽  
Uv Leds ◽  
Multi Quantum Well ◽  
Optimization And Performance

Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

2015 ◽  
Vol 118 (24) ◽  
pp. 245705 ◽  
Author(s):  
S. I. Maximenko ◽  
M. P. Lumb ◽  
R. Hoheisel ◽  
M. Gonzalez ◽  
D. A. Scheiman ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Quantum Well ◽  
Radiation Response ◽  
Induced Current ◽  
Current Analysis ◽  
Electron Beam Induced Current ◽  
Multi Quantum Well

Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

1981 ◽  
Vol 37 (3) ◽  
pp. 219-222 ◽  
Author(s):  
C. Weisbuch ◽  
R.C. Miller ◽  
R. Dingle ◽  
A.C. Gossard ◽  
W. Wiegman
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Quantum States ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures

2019 ◽  
Vol 512 ◽  
pp. 213-218 ◽  
Author(s):  
Wenxian Yang ◽  
Yukun Zhao ◽  
Yuanyuan Wu ◽  
Xuefei Li ◽  
Zhiwei Xing ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Uv Emission ◽  
Deep Uv

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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