scholarly journals Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping

AIP Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 075104 ◽  
Author(s):  
Sung Tae Yoo ◽  
Byeongchan So ◽  
Hye In Lee ◽  
Okhyun Nam ◽  
Kyu Chang Park
Keyword(s):  
Electron Beam ◽  
Carbon Nanotube ◽  
Quantum Well ◽  
Ultraviolet Light ◽  
Large Area ◽  
Deep Ultraviolet ◽  
Multi Quantum Well

High Quality Pseudomorphic In 0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators

2013 ◽  
Vol 30 (4) ◽  
pp. 046102
Author(s):  
Xiao-Hong Yang ◽  
Shao-Qing Liu ◽  
Hai-Qiao Ni ◽  
Mi-Feng Li ◽  
Liang Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Large Area ◽  
High Quality ◽  
Multi Quantum Well

(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width

2010 ◽  
Vol 207 (9) ◽  
pp. 2198-2200 ◽  
Author(s):  
Tim Kolbe ◽  
Toni Sembdner ◽  
Arne Knauer ◽  
Viola Kueller ◽  
Hernan Rodriguez ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Well Width ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2196-2198 ◽  
Author(s):  
Tim Kolbe ◽  
Toni Sembdner ◽  
Arne Knauer ◽  
Viola Kueller ◽  
Hernan Rodriguez ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Carrier Injection ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes ◽  
Multi Quantum Well

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

2018 ◽  
Vol 112 (1) ◽  
pp. 011101 ◽  
Author(s):  
Cheng Liu ◽  
Yu Kee Ooi ◽  
S. M. Islam ◽  
Huili (Grace) Xing ◽  
Debdeep Jena ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire

1999 ◽  
Vol 572 ◽  
Author(s):  
Patrick J. Mcnally ◽  
T. Tuomi ◽  
R. Rantamaki ◽  
K. Jacobs ◽  
L. Considine ◽  
...  
Keyword(s):  
Quantum Well ◽  
Sapphire Substrate ◽  
Large Scale ◽  
Epitaxial Lateral Overgrowth ◽  
Large Area ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Transmission Modes ◽  
Multi Quantum Well

ABSTRACTSynchrotron white beam x-ray topography techniques, in section and large-area transmission modes, have been applied to the evaluation of ELOG GaN on A12O3. Using the openings in 100 nm thick SiO2 windows, a new GaN growth took place, which resulted in typical overgrowth thicknesses of 6.8 μm. Measurements on the recorded Laue patterns indicate that the misorientation of GaN with respect to the sapphire substrate (excluding a 30° rotation between them) varies considerably along various crystalline directions, reaching a maximum of a ∼0.66° rotation of the (0001) plane about the [01•1] axis. This is ∼3% smaller than the misorientation measured in the non-ELOG reference, which reached a maximum of 0.68°. This misorientation varies measurably as the stripe or window dimensions are changed. The quality of the ELOG epilayers is improved when compared to the non- ELOG samples, though some local deviations from lattice coherence were observed. Long range and large-scale (order of 100 μm long) strain structures were observed in all multi quantum well epilayers.

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