Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

2016 ◽  
Vol 109 (17) ◽  
pp. 172101 ◽  
Author(s):  
S. Yoshida ◽  
D. Lin ◽  
A. Vais ◽  
A. Alian ◽  
J. Franco ◽  
...  
Keyword(s):  
Systematic Study ◽  
Interfacial Reactions ◽  
Gate Stacks ◽  
Metal Electrodes ◽  
High K

scholarly journals Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

2009 ◽  
Vol 94 (12) ◽  
pp. 122905 ◽  
Author(s):  
Yuki Kita ◽  
Shinichi Yoshida ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Kenji Shiraishi ◽  
...  
Keyword(s):  
Work Function ◽  
Systematic Study ◽  
Gate Stacks ◽  
High K

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

2006 ◽  
Vol 27 (10) ◽  
pp. 814-816 ◽  
Author(s):  
H.D.B. Gottlob ◽  
T. Echtermeyer ◽  
M. Schmidt ◽  
T. Mollenhauer ◽  
J.K. Efavi ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Electrodes ◽  
High K

The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks

2019 ◽  
Vol 19 (2) ◽  
pp. 87-99 ◽  
Author(s):  
Felice Crupi ◽  
Paolo Magnone ◽  
Eddy Simoen ◽  
Luigi Pantisano ◽  
Gino Giusi ◽  
...  
Keyword(s):  
Gate Stacks ◽  
High K

Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks

2012 ◽  
Vol 51 ◽  
pp. 081303 ◽  
Author(s):  
Shinya Hibino ◽  
Tomonori Nishimura ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Layer Formation ◽  
Gate Stacks ◽  
Dipole Layer ◽  
High K

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1901-1904 ◽  
Author(s):  
Dongwoo Kim ◽  
Seonhaeng Lee ◽  
Cheolgyu Kim ◽  
Chiho Lee ◽  
Jeongsoo Park ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Hot Carrier ◽  
High K ◽  
Enhanced Degradation
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