Band gap narrowing models tested on low recombination phosphorus laser doped silicon

Morris Dahlinger; Kai Carstens

doi:10.1063/1.4964950

Band gap narrowing models tested on low recombination phosphorus laser doped silicon

Journal of Applied Physics ◽

10.1063/1.4964950 ◽

2016 ◽

Vol 120 (15) ◽

pp. 155701 ◽

Cited By ~ 1

Author(s):

Morris Dahlinger ◽

Kai Carstens

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Band Gap Narrowing

Download Full-text

Band-Gap Narrowing in n-Type Moderately Doped Silicon at 300 K

physica status solidi (b) ◽

10.1002/pssb.2221170218 ◽

1983 ◽

Vol 117 (2) ◽

pp. 575-584 ◽

Cited By ~ 8

Author(s):

H. Vancong

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Band Gap Narrowing

Download Full-text

Measurements of band gap narrowing in heavily doped epitaxial emitters and the modeling of heavily doped silicon

10.1109/iedm.1980.189812 ◽

1980 ◽

Author(s):

G.E. Possin ◽

M.S. Adler ◽

B.J. Baliga

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

Download Full-text

Band gap narrowing in heavily doped silicon

Solid-State Electronics ◽

10.1016/0038-1101(82)90180-0 ◽

1982 ◽

Vol 25 (9) ◽

pp. 909-911 ◽

Cited By ~ 17

Author(s):

S.R. Dhariwal ◽

V.N. Ojha

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

Download Full-text

Electrical band-gap narrowing in - and heavily doped silicon at 300K

Microelectronics Reliability ◽

10.1016/0026-2714(87)90119-3 ◽

1987 ◽

Vol 27 (4) ◽

pp. 790

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

Download Full-text

The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

phys stat sol (a) ◽

10.1002/pssa.2211480226 ◽

1995 ◽

Vol 148 (2) ◽

pp. 575-584 ◽

Cited By ~ 6

Author(s):

S. D. Ristić ◽

Z. D. Prijić ◽

S. Ž. Mijalković

Keyword(s):

Dielectric Constant ◽

Band Gap ◽

Impurity Concentration ◽

Static Dielectric Constant ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

Download Full-text

Application and comparison of band gap narrowing models for passivated phosphorus doped silicon surfaces

Journal of Applied Physics ◽

10.1063/1.4939888 ◽

2016 ◽

Vol 119 (2) ◽

pp. 025708 ◽

Cited By ~ 3

Author(s):

Achim Kimmerle ◽

Johannes Greulich ◽

Halvard Haug ◽

Andreas Wolf

Keyword(s):

Band Gap ◽

Silicon Surfaces ◽

Doped Silicon ◽

Band Gap Narrowing ◽

Phosphorus Doped

Download Full-text

Band‐gap narrowing in heavily doped silicon: A comparison of optical and electrical data

Journal of Applied Physics ◽

10.1063/1.340257 ◽

1988 ◽

Vol 63 (2) ◽

pp. 425-429 ◽

Cited By ~ 123

Author(s):

Joachim Wagner ◽

Jesús A. del Alamo

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing ◽

Electrical Data

Download Full-text

Statistical comparisons of data on band‐gap narrowing in heavily doped silicon: Electrical and optical measurements

Journal of Applied Physics ◽

10.1063/1.332950 ◽

1984 ◽

Vol 55 (10) ◽

pp. 3582-3587 ◽

Cited By ~ 47

Author(s):

Herbert S. Bennett ◽

Charles L. Wilson

Keyword(s):

Band Gap ◽

Optical Measurements ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

Download Full-text

Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

Solar Energy Materials and Solar Cells ◽

10.1016/s0927-0248(00)00082-9 ◽

2001 ◽

Vol 65 (1-4) ◽

pp. 95-103 ◽

Cited By ~ 10

Author(s):

Jürgen O Schumacher ◽

Pietro P Altermatt ◽

Gernot Heiser ◽

Armin G Aberle

Keyword(s):

Numerical Simulation ◽

Band Gap ◽

Doped Silicon ◽

Band Gap Narrowing ◽

Phosphorus Doped

Download Full-text

Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K

Solid-State Electronics ◽

10.1016/0038-1101(86)90003-1 ◽

1986 ◽

Vol 29 (9) ◽

pp. 857-860 ◽

Cited By ~ 2

Author(s):

H. Van Cong ◽

S. Brunet

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing ◽

P Type

Download Full-text