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Application and comparison of band gap narrowing models for passivated phosphorus doped silicon surfaces
Journal of Applied Physics
◽
10.1063/1.4939888
◽
2016
◽
Vol 119
(2)
◽
pp. 025708
◽
Cited By ~ 3
Author(s):
Achim Kimmerle
◽
Johannes Greulich
◽
Halvard Haug
◽
Andreas Wolf
Keyword(s):
Band Gap
◽
Silicon Surfaces
◽
Doped Silicon
◽
Band Gap Narrowing
◽
Phosphorus Doped
Download Full-text
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Cited By
References
Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters
Solar Energy Materials and Solar Cells
◽
10.1016/s0927-0248(00)00082-9
◽
2001
◽
Vol 65
(1-4)
◽
pp. 95-103
◽
Cited By ~ 10
Author(s):
Jürgen O Schumacher
◽
Pietro P Altermatt
◽
Gernot Heiser
◽
Armin G Aberle
Keyword(s):
Numerical Simulation
◽
Band Gap
◽
Doped Silicon
◽
Band Gap Narrowing
◽
Phosphorus Doped
Download Full-text
Band-Gap Narrowing in n-Type Moderately Doped Silicon at 300 K
physica status solidi (b)
◽
10.1002/pssb.2221170218
◽
1983
◽
Vol 117
(2)
◽
pp. 575-584
◽
Cited By ~ 8
Author(s):
H. Vancong
Keyword(s):
Band Gap
◽
Doped Silicon
◽
Band Gap Narrowing
Download Full-text
Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.
Shinku
◽
10.3131/jvsj.38.295
◽
1995
◽
Vol 38
(3)
◽
pp. 295-298
◽
Cited By ~ 2
Author(s):
Wen Biao YING
◽
Yusuke MIZOKAWA
◽
Yoshitomo KAMIURA
◽
Yong Bing YU
◽
Masafumi NISHIMATSU
◽
...
Keyword(s):
Mass Spectroscopy
◽
Photoelectron Spectroscopy
◽
Silicon Surfaces
◽
Secondary Ion Mass Spectroscopy
◽
X Ray
◽
Doped Silicon
◽
Phosphorus Doped
◽
Secondary Ion
Download Full-text
Measurements of band gap narrowing in heavily doped epitaxial emitters and the modeling of heavily doped silicon
10.1109/iedm.1980.189812
◽
1980
◽
Author(s):
G.E. Possin
◽
M.S. Adler
◽
B.J. Baliga
Keyword(s):
Band Gap
◽
Doped Silicon
◽
Heavily Doped
◽
Band Gap Narrowing
Download Full-text
Observation of Heavily Phosphorus-Doped Silicon Surfaces by Atomic Force Microscope.
Hyomen Kagaku
◽
10.1380/jsssj.19.624
◽
1998
◽
Vol 19
(10)
◽
pp. 624-628
◽
Cited By ~ 1
Author(s):
Toshikazu HAMADA
◽
Yusuke MIZOKAWA
◽
Wen Biao YING
◽
Katsuto TANAHASHI
◽
Yoshitomo KAMIURA
◽
...
Keyword(s):
Atomic Force Microscope
◽
Silicon Surfaces
◽
Atomic Force
◽
Doped Silicon
◽
Phosphorus Doped
Download Full-text
Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy
Thin Solid Films
◽
10.1016/s0040-6090(99)00118-2
◽
1999
◽
Vol 343-344
◽
pp. 393-396
◽
Cited By ~ 15
Author(s):
W.B. Ying
◽
Y. Mizokawa
◽
K. Tanahashi
◽
Y. Kamiura
◽
M. Iida
◽
...
Keyword(s):
Photoelectron Spectroscopy
◽
Silicon Surfaces
◽
Initial Oxidation
◽
X Ray
◽
Doped Silicon
◽
Phosphorus Doped
Download Full-text
Band gap narrowing in heavily doped silicon
Solid-State Electronics
◽
10.1016/0038-1101(82)90180-0
◽
1982
◽
Vol 25
(9)
◽
pp. 909-911
◽
Cited By ~ 17
Author(s):
S.R. Dhariwal
◽
V.N. Ojha
Keyword(s):
Band Gap
◽
Doped Silicon
◽
Heavily Doped
◽
Band Gap Narrowing
Download Full-text
Electrical band-gap narrowing in - and heavily doped silicon at 300K
Microelectronics Reliability
◽
10.1016/0026-2714(87)90119-3
◽
1987
◽
Vol 27
(4)
◽
pp. 790
Keyword(s):
Band Gap
◽
Doped Silicon
◽
Heavily Doped
◽
Band Gap Narrowing
Download Full-text
Band gap narrowing models tested on low recombination phosphorus laser doped silicon
Journal of Applied Physics
◽
10.1063/1.4964950
◽
2016
◽
Vol 120
(15)
◽
pp. 155701
◽
Cited By ~ 1
Author(s):
Morris Dahlinger
◽
Kai Carstens
Keyword(s):
Band Gap
◽
Doped Silicon
◽
Band Gap Narrowing
Download Full-text
The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon
phys stat sol (a)
◽
10.1002/pssa.2211480226
◽
1995
◽
Vol 148
(2)
◽
pp. 575-584
◽
Cited By ~ 6
Author(s):
S. D. Ristić
◽
Z. D. Prijić
◽
S. Ž. Mijalković
Keyword(s):
Dielectric Constant
◽
Band Gap
◽
Impurity Concentration
◽
Static Dielectric Constant
◽
Doped Silicon
◽
Heavily Doped
◽
Band Gap Narrowing
Download Full-text
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