scholarly journals Recombination activity of light-activated copper defects inp-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

2016 ◽  
Vol 120 (12) ◽  
pp. 125703 ◽  
Author(s):  
Alessandro Inglese ◽  
Jeanette Lindroos ◽  
Henri Vahlman ◽  
Hele Savin
Keyword(s):  
Temperature Dependent ◽  
Recombination Activity ◽  
Type Silicon

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

Dissociation Kinetics of Shallow-Acceptor-Hydrogen Pairs in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
T. Zundel ◽  
J. Weber
Keyword(s):  
Schottky Diode ◽  
Reverse Bias ◽  
Temperature Dependent ◽  
Dissociation Kinetics ◽  
Shallow Acceptor ◽  
Dissociation Energies ◽  
Type Silicon ◽  
P Type ◽  
Kinetics Of

AbstractAnnealing of hydrogenated p-type silicon with a reverse bias applied to a Schottky diode allows us to precisely determine the dissociation frequency vA of shallow acceptor-hydrogen pairs (AH with A = B, Al, Ga, and In). The temperature dependent values of vA satisfy the relation vA = voAexp (-EA/kT), with voB = 2.8 . 1014 s-1, voAl = 3.1 . 1013 s-1, VoGa = 6.9 . 1013 s-1, and voIn = 8.4 · 1013 s-1. The dissociation energies EA depend only weakly on the acceptors: EB = (1.28±0.03)eV, EAl = (1.44±0.02) eV, EGa = (1.40±0.03) eV, and EIn = (1.42±0.05) eV. The dissociation frequency of BH pairs shifts to a lower value when H is replaced by the deuterium isotope.

Recombination activity of iron-boron pairs in compensated p-type silicon

2010 ◽  
Vol 247 (9) ◽  
pp. 2218-2221 ◽  
Author(s):  
Daniel Macdonald ◽  
An Liu
Keyword(s):  
Recombination Activity ◽  
Type Silicon ◽  
P Type

Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon

2018 ◽  
Vol 34 (1) ◽  
pp. 015003 ◽  
Author(s):  
Hung V Pham ◽  
Phuong Yen Le ◽  
Hiep N Tran ◽  
Thomas J Raeber ◽  
Mohammad Saleh N Alnassar ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Type Silicon ◽  
P Type

Modification of Recombination Activity of Dislocations in Si and SiGe by Contamination and Hydrogenation

1995 ◽  
Vol 378 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert ◽  
V. Higgs
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Dislocation Activity ◽  
Cu Contamination ◽  
Electron Beam Induced Current

AbstractTemperature-dependent (80 … 300 K) measurements of dislocation recombination activity by the electron-beam-induced-current (EBIC) technique are reported. Controlled Cu contamination (ppb to ppm range), chemomechanical polishing and hydrogenation treatments were applied to alter dislocation properties. Increasing Cu level is found not only to increase the electrical activity of misfit dislocations in SiGe/Si structures at 300 K, but also to change its dependence on temperature. At low contamination, shallow centres control dislocation activity while deep centres are characteristic at higher Cu levels. Heavy Cu contamination results in very strong recombination activity which is attributed to precipitates. Chemomechanical polishing has an effect which is analogous to medium Cu contamination. Hydrogenation was found to passivate recombination activity at 300 K, but did not show pronounced effects on activity at low temperature.

Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon

2015 ◽  
Vol 242 ◽  
pp. 102-108 ◽  
Author(s):  
Tim Niewelt ◽  
Jonas Schön ◽  
Juliane Broisch ◽  
Stefan Rein ◽  
Jonas Haunschild ◽  
...  
Keyword(s):  
Experimental Data ◽  
Slow Light ◽  
Hole Concentration ◽  
Oxygen Defect ◽  
Recombination Activity ◽  
Experimental Proof ◽  
Type Silicon ◽  
Formation Kinetics ◽  
Oxygen Defects ◽  
Kinetics Of

We present new experimental data on light-induced degradation due to the boron oxygen defect in compensatedn-type silicon. We are the first to show that both defect components known fromp-type silicon are formed in compensatedn-type silicon. A parameterization of the injection dependent recombination activity of the slower formed defect component is established. The formation kinetics of both defect components are studied and modeled under different conditions. It is found that the same rate factors as inp-type can describe the degradation, if the actual hole concentration under illumination is taken into account. The regeneration process known to permanently deactivate boron oxygen defects inp-type is successfully applied ton-type material and the illumination stability of the regenerated state is tested and proven.

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

2011 ◽  
Vol 1 (1) ◽  
pp. 54-58 ◽  
Author(s):  
F. E. Rougieux ◽  
M. Forster ◽  
D. Macdonald ◽  
A. Cuevas ◽  
B. Lim ◽  
...  
Keyword(s):  
Recombination Activity ◽  
Type Silicon ◽  
Oxygen Related Defect ◽  
Related Defect

Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Chaussemy ◽  
B. Canut ◽  
S. N. Kumar ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Coefficients ◽  
Good Description ◽  
Temperature Dependent ◽  
One Dimensional ◽  
Type Silicon ◽  
The One ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTThe effects of the implantation parameters (dose and energy) on the Arsenic redistribution and outdiffusion rate in (100) p-type silicon, after 7–12 s Rapid Thermal Annealing in the 1100–1200°C temperature range have been investigated. Four doses ranging from 2×1014 to l×1016 cm−2, and As+ energies between 70 and 170 keV, have been studied. The experimental diffusion profiles obtained from the SIMS measurements, in complement with the RBS results, were modelled using the one dimensional Fick's equation with semi-infinite boundary conditions, using a concentration and temperature dependent diffusion coefficient D(C, T). The As diffusivity was classically attributed to As+V0, As+V−, and As+V − pairs with the related diffusion coefficients taken from the literature. A relatively good description of the As redistribution was obtained without introducing any transient or SPE effects.

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