scholarly journals Depletion region surface effects in electron beam induced current measurements

2016 ◽  
Vol 120 (9) ◽  
pp. 095702 ◽  
Author(s):  
Paul M. Haney ◽  
Heayoung P. Yoon ◽  
Benoit Gaury ◽  
Nikolai B. Zhitenev
Keyword(s):  
Electron Beam ◽  
Surface Effects ◽  
Depletion Region ◽  
Induced Current ◽  
Electron Beam Induced Current

scholarly journals Study of Low Voltage Prebreakdown Sites in Multicrystalline Si Based Cells by the LBIC, EL, and EDS Methods

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
V. I. Orlov ◽  
E. B. Yakimov ◽  
E. P. Magomedbekov ◽  
A. B. Danilin
Keyword(s):  
Electron Beam ◽  
Laser Beam ◽  
Reverse Bias ◽  
Low Voltage ◽  
Depletion Region ◽  
Extended Defects ◽  
Induced Current ◽  
X Ray ◽  
Si Solar Cells ◽  
Electron Beam Induced Current

Breakdown sites in multicrystalline Si solar cells have been studied by reverse-bias electroluminescence, electron beam induced current (EBIC) and laser beam induced current (LBIC), and Energy Dispersive X-Ray Spectroscopy methods. In the breakdown sites revealed by EL at small reverse bias (~5 V), the enhanced aluminum and oxygen concentration is revealed. Such breakdowns can be located inside the depletion region because they are not revealed by the EBIC or LBIC methods. Breakdowns revealed by EL at larger bias correlate well with extended defects in the EBIC and LBIC images.

Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current

2018 ◽  
Vol 924 ◽  
pp. 935-938
Author(s):  
Khaled Driche ◽  
Hitoshi Umezawa ◽  
Shinya Ohmagari ◽  
Hajime Okumura ◽  
Yoshiaki Mokuno ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Depletion Region ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Effect Transistor ◽  
Lateral Gate ◽  
P Type

Lateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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