Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

2016 ◽  
Vol 120 (8) ◽  
pp. 085706 ◽  
Author(s):  
Thomas R. Harris ◽  
Mee-Yi Ryu ◽  
Yung Kee Yeo ◽  
Buguo Wang ◽  
C. L. Senaratne ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Direct Bandgap ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence

Temperature dependent photoluminescence studies of ZnSe:I single crystals grown by chemical vapor transport

Pramana ◽  
1996 ◽  
Vol 47 (2) ◽  
pp. 133-143 ◽  
Author(s):  
Suruchi Anand ◽  
Prabhat Verma ◽  
S C Abbi ◽  
K P Jain ◽  
M J Tafreshi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Temperature Dependent ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence

Temperature dependent photoluminescence studies in CsI:Tl films with varying thicknesses

2013 ◽  
Vol 251 (4) ◽  
pp. 748-754 ◽  
Author(s):  
Seema Shinde ◽  
S. G. Singh ◽  
Shashwati Sen ◽  
S. C. Gadkari ◽  
S. K. Gupta
Keyword(s):  
Temperature Dependent ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence

Detailed Photoluminescence Studies of Heat-Treated InP

1992 ◽  
Vol 262 ◽  
Author(s):  
Klaus Pressel ◽  
C. Hiller ◽  
G. Bohnert ◽  
F. Prinz ◽  
A. Dörnen
Keyword(s):  
Magnetic Field ◽  
Heat Treatment ◽  
Wavelength Range ◽  
Concentration Level ◽  
Field Studies ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Heat Treated ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence

ABSTRACTWe present highly resolved photoluminescence studies on heat-treated nominally undoped InP, which was either unprotected or protected by SiO2 or Si3N4 caps during the annealing procedures. Annealing of InP above 350°C leads to six different sharp emissions in the wavelength range between 8790 and 8900 Å, which are not observed at 4 K in Zn-doped or Fe-doped samples. Based on temperature-dependent photoluminescence studies, time-resolved measurements and preliminary magnetic field studies we ascribe these emissions to isoelectronic bound exciton transitions. It is also shown that the two emissions at 8883 Å (11254 cm-1) (E) and 8889 Å (11246 cm-1) (F) belong to one center. We observe that the lines not only depend on the heat treatment but also on some unintentionally incorporated or residual impurities of a low concentration level. Possible candidates are discussed.

Temperature dependent photoluminescence studies of ZnO thin film grown on (111) YSZ substrate

2011 ◽  
Vol 319 (1) ◽  
pp. 8-12 ◽  
Author(s):  
D. Sentosa ◽  
B. Liu ◽  
L.M. Wong ◽  
Y.V. Lim ◽  
T.I. Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zno Thin Film ◽  
Temperature Dependent ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence
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