Detailed Photoluminescence Studies of Heat-Treated InP

1992 ◽  
Vol 262 ◽  
Author(s):  
Klaus Pressel ◽  
C. Hiller ◽  
G. Bohnert ◽  
F. Prinz ◽  
A. Dörnen
Keyword(s):  
Magnetic Field ◽  
Heat Treatment ◽  
Wavelength Range ◽  
Concentration Level ◽  
Field Studies ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Heat Treated ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence

ABSTRACTWe present highly resolved photoluminescence studies on heat-treated nominally undoped InP, which was either unprotected or protected by SiO2 or Si3N4 caps during the annealing procedures. Annealing of InP above 350°C leads to six different sharp emissions in the wavelength range between 8790 and 8900 Å, which are not observed at 4 K in Zn-doped or Fe-doped samples. Based on temperature-dependent photoluminescence studies, time-resolved measurements and preliminary magnetic field studies we ascribe these emissions to isoelectronic bound exciton transitions. It is also shown that the two emissions at 8883 Å (11254 cm-1) (E) and 8889 Å (11246 cm-1) (F) belong to one center. We observe that the lines not only depend on the heat treatment but also on some unintentionally incorporated or residual impurities of a low concentration level. Possible candidates are discussed.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

Temperature dependent photoluminescence studies of ZnSe:I single crystals grown by chemical vapor transport

Pramana ◽  
1996 ◽  
Vol 47 (2) ◽  
pp. 133-143 ◽  
Author(s):  
Suruchi Anand ◽  
Prabhat Verma ◽  
S C Abbi ◽  
K P Jain ◽  
M J Tafreshi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Temperature Dependent ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-dependent photoluminescence properties of porous fluorescent SiC

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Weifang Lu ◽  
Abebe T. Tarekegne ◽  
Yiyu Ou ◽  
Satoshi Kamiyama ◽  
Haiyan Ou
Keyword(s):  
Surface Passivation ◽  
Surface States ◽  
Atomic Layer ◽  
Emission Peak ◽  
Photoelectron Spectra ◽  
Porous Structures ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Pl Emission ◽  
Temperature Dependent Photoluminescence

Abstract A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The porous structures were prepared using an anodic oxidation etching method and passivated by atomic layer deposited (ALD) Al2O3 films. An impressive enhancement of PL intensity was observed in porous SiC with ALD Al2O3, especially at low temperatures. At temperatures below 150 K, two prominent PL emission peaks located at 517 nm and 650 nm were observed. The broad emission peak at 517 nm was attributed to originate from the surface states in the porous structures, which was supported by X-ray photoelectron spectra characterization. The emission peak at 650 nm is due to donor-acceptor-pairs (DAP) recombination via nitrogen donors and boron-related double D-centers in fluorescent SiC substrates. The results of the present work suggest that the ALD Al2O3 films can effectively suppress the non-radiative recombination for the porous structures on fluorescent SiC. In addition, we provide the evidence based on the low-temperature time-resolved PL that the mechanism behind the PL emission in porous structures is mainly related to the transitions via surface states.

Temperature dependent photoluminescence studies in CsI:Tl films with varying thicknesses

2013 ◽  
Vol 251 (4) ◽  
pp. 748-754 ◽  
Author(s):  
Seema Shinde ◽  
S. G. Singh ◽  
Shashwati Sen ◽  
S. C. Gadkari ◽  
S. K. Gupta
Keyword(s):  
Temperature Dependent ◽  
Photoluminescence Studies ◽  
Temperature Dependent Photoluminescence
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