Complementary resistive switching in single sandwich structure for crossbar memory arrays

2016 ◽  
Vol 120 (8) ◽  
pp. 084502 ◽  
Author(s):  
W. J. Duan ◽  
J. B. Wang ◽  
X. L. Zhong ◽  
H. J. Song ◽  
B. Li
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Memory Arrays

Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density

2016 ◽  
Vol 8 (35) ◽  
pp. 23348-23355 ◽  
Author(s):  
Ahmed Al-Haddad ◽  
Chengliang Wang ◽  
Haoyuan Qi ◽  
Fabian Grote ◽  
Liaoyong Wen ◽  
...  
Keyword(s):  
Power Consumption ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Memory Arrays ◽  
Ultrahigh Density ◽  
Switching Memory

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Addressing crosstalk in crossbar memory arrays with a resistive switching ZnO homojunction diode

2021 ◽  
Vol 129 (20) ◽  
pp. 205106
Author(s):  
Punya Mainali ◽  
Lyndon D. Bastatas ◽  
Elena Echeverria ◽  
Phadindra Wagle ◽  
Prasanna Sankaran ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Arrays

scholarly journals A new analytical electro-thermal model in 3D resistive switching memory arrays

2016 ◽  
Vol 46 (10) ◽  
pp. 107312
Author(s):  
ZhiWei ZONG ◽  
ZhuoYu JI ◽  
Ling LI ◽  
DeLong QIU ◽  
NianDuan LU ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Thermal Model ◽  
Resistive Switching Memory ◽  
Memory Arrays ◽  
Switching Memory

Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

2017 ◽  
Vol 51 (2) ◽  
pp. 025102 ◽  
Author(s):  
Jian Liu ◽  
Huafeng Yang ◽  
Zhongyuan Ma ◽  
Kunji Chen ◽  
Xinxin Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Switching Dynamics ◽  
Multilevel Storage

scholarly journals High-performance Ni/Yb2O3/TaN Programmable Memory Cell for Nonvolatile Memory Applications

2012 ◽  
pp. 74-77
Author(s):  
Somnath Mondal ◽  
Fa-Hsyang Chen ◽  
Tung-Ming Pan
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Sandwich Structure ◽  
Oxygen Vacancies ◽  
Memory Cell ◽  
Switching Behavior ◽  
Electrical Performance ◽  
Data Retention ◽  
Memory Applications

Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role in resistive switching. Under negative bias, oxygen vacancies or other metallic defects migrate through Yb2O3 oxide and SET occurs. A reproducible resistance switching behavior was observed with high resistance ratio of about 105 with excellent data retention, and good immunity to read disturbance, are also revealed. In particular, the simple sandwich structure and excellent electrical performance of the memory cell making them ideal for the basis for highspeed, high-density, nonvolatile memory applications.

Study on Preparation and Resistive Switching Characteristics of SnO2 Films

2014 ◽  
Vol 609-610 ◽  
pp. 169-174 ◽  
Author(s):  
Hong Xia Li ◽  
Hui Chen ◽  
Wei Qing Ke ◽  
Jun Hua Xi ◽  
Zhe Kong ◽  
...  
Keyword(s):  
Film Thickness ◽  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Switching ◽  
Practical Application ◽  
Switching Characteristic ◽  
Low Resistance ◽  
Switching Characteristics ◽  
Switching Devices

In this paper, resistance switching devices with Au/SnO2/Al sandwich structure were fabricated. The prepared devices showed a reliable unipolar resistance switching characteristic. The forming voltage of SnO2-based resistance devices increased with increasing film thicknesses, while SnO2film thickness had little influence on set and reset voltages. When the SnO2film thickness was 46 nm, the device showed steady and reliable conversion under voltage sweeping and the ratio between high and low resistance states was higher than 102, which can basically satisfy the requirements for practical application.

Imaging magnetic microstructure with SEMPA

1993 ◽  
Vol 51 ◽  
pp. 1032-1033
Author(s):  
M. H. Kelley ◽  
J. Unguris ◽  
R. J. Celotta ◽  
D. T. Pierce
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Sandwich Structure ◽  
Magnetic Coupling ◽  
Polarization Analysis ◽  
Secondary Electrons ◽  
Magnetic Microstructure ◽  
Escape Depth ◽  
Scanning Electron

By measuring the spin polarization of secondary electrons generated in a scanning electron microscope, scanning electron microscopy with polarization analysis (SEMPA) can directly image the magnitude and direction of a material’s magnetization. Because the escape depth of the secondaries is only on the order of 1 nm, SEMPA is especially well-suited for investigating the magnetization of ultra-thin films and surfaces. We have exploited this feature of SEMPA to study the magnetic microstrcture and magnetic coupling in ferromagnetic multilayers where the layers may only be a few atomic layers thick. For example, we have measured the magnetic coupling in Fe/Cr/Fe(100) and Fe/Ag/Fe(100) trilayers and have found that the coupling oscillates between ferromagnetic and antiferromagnetic as a function of the Cr or Ag spacer thickness.The SEMPA apparatus has been described in detail elsewhere. The sample consisted of a magnetic sandwich structure with a wedge-shaped interlayer as shown in Fig. 1.

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