scholarly journals Determination of crystal growth rates during rapid solidification of polycrystalline aluminum by nano-scale spatio-temporal resolution in situ transmission electron microscopy

2016 ◽  
Vol 120 (5) ◽  
pp. 055106 ◽  
Author(s):  
K. Zweiacker ◽  
J. T. McKeown ◽  
C. Liu ◽  
T. LaGrange ◽  
B. W. Reed ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Growth ◽  
Rapid Solidification ◽  
Growth Rates ◽  
Polycrystalline Aluminum ◽  
Transmission Electron ◽  
Spatio Temporal

Crystal Growth Rates in Doped SbxTe Fast-Growth Phase-Change Films Studied with Transmission Electron Microscopy

2008 ◽  
Vol 1072 ◽  
Author(s):  
Bart J. Kooi ◽  
Ramanathaswamy Pandian ◽  
Jeff Th. M. De Hosson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Growth ◽  
Phase Change ◽  
Growth Phase ◽  
Growth Rates ◽  
Fast Growth ◽  
Various Boundary Conditions ◽  
Dielectric Layers ◽  
Transmission Electron

ABSTRACTIsothermal crystallization of doped SbxTe fast-growth phase-change films was investigated using transmission electron microscopy with in situ heating. SbxTe films with four different values for the Sb/Te ratio, x=3.0, 3.3, 3.6 and 4.2, were analyzed and the films were sandwiched between two types of dielectric layers. One dielectric layer type is based on 80at.%ZnS-20at.%SiO2, the other on (Ge,Cr)N. The crystal growth rates reduce if the phase-change films are sandwiched between amorphous dielectric layers. The reduction is very pronounced at the lowest measured temperatures (150 °C), becomes smaller at higher temperatures and probably disappears at around 200 °C. The crystal growth rates increase with increasing Sb/Te ratio, but the activation energy for crystal growth is not significantly affected by the Sb/Te ratio. Finally a systematic study of the effect of the electron beam of the TEM on the crystal growth rates is performed showing accelerated growth rates. The present work shows that particularly at relative low temperatures, just above the glass-transition temperature, the growth rates as limited by the atomic mobilities are sensitive to various (boundary) conditions, e.g. capping layers and irradiation.

scholarly journals In-situ transmission electron microscopy determination of solid-state diffusion in the aluminum-nickel system

2019 ◽  
Vol 276 ◽  
pp. 114-121
Author(s):  
Joshua M. Pauls ◽  
Christopher E. Shuck ◽  
Arda Genç ◽  
Sergei Rouvimov ◽  
Alexander S. Mukasyan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Solid State Diffusion ◽  
Transmission Electron ◽  
State Diffusion

scholarly journals Determination of domain wall chirality using in situ Lorentz transmission electron microscopy

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 056807 ◽  
Author(s):  
Jordan J. Chess ◽  
Sergio A. Montoya ◽  
Eric E. Fullerton ◽  
Benjamin J. McMorran
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Domain Wall ◽  
Transmission Electron ◽  
Lorentz Transmission Electron Microscopy

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

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