Generation of large-area and glow-like surface discharge in atmospheric pressure air

2016 ◽  
Vol 23 (8) ◽  
pp. 083520 ◽  
Author(s):  
Ying Song ◽  
Yang Xia ◽  
Zhenhua Bi ◽  
Xueyang Wang ◽  
Zhihua Qi ◽  
...  
2014 ◽  
Vol 314 ◽  
pp. 1074-1081 ◽  
Author(s):  
Jia-Yang Juang ◽  
Tung-Sheng Chou ◽  
Hsin-Tien Lin ◽  
Yuan-Fang Chou ◽  
Chih-Chiang Weng

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000129-000134 ◽  
Author(s):  
Kewei Xiao ◽  
Jesus N. Calata ◽  
Hanguang Zheng ◽  
Khai D.T. Ngo ◽  
Guo-Quan Lu

Sintered nanoscale silver joint is an emerging lead-free die-attach solution for high-temperature packaging because of silver's high melting temperature. For bonding small chips, the nanosilver solution can be achieved with a simple heating profile under atmospheric pressure. However, for bonding large-area chips, e.g. > 1 cm2 IGBT chips, uniaxial pressure of a few MPa has been found necessary during the sintering stage of the bonding process, which is carried out at temperatures below 275°C. Hot-pressing at high temperatures can cause significant wear and tear on the processing equipment, resulting in high maintenance cost. In this study, we ran a series of experiments aimed at lowering the hot-pressing temperature. Specifically, we examined a process involving hot-press drying, followed by sintering without any applied pressure. A fractional factorial design of experiments was used to identify the importance and interaction of various processing parameters, such as hot-pressing pressure/temperature/time and sintering temperature/time, on the final bond quality of sintered nanosilver joints. Based on the results, a simpler process, consisting of hot-press drying at 180°C under 3 MPa, followed by sintering at 275°C under atmospheric pressure was found to produce attachments with die-shear strength in excess of 30 MPa.


2001 ◽  
Vol 2 (3-4) ◽  
pp. 587-593 ◽  
Author(s):  
Miloslav Štefečka ◽  
Darlusz Korzec ◽  
Milan Širý ◽  
Yoji Imahori ◽  
Masashi Kando

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