scholarly journals Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075111 ◽  
Author(s):  
Merve Karakaya ◽  
Elif Bilgilisoy ◽  
Ozan Arı ◽  
Yusuf Selamet
2009 ◽  
Vol 1165 ◽  
Author(s):  
Michelle Nicole Sestak ◽  
Jian Li ◽  
Naba Raj Paudel ◽  
Kristopher Wieland ◽  
Jie Chen ◽  
...  

AbstractIn this study, 1 μm thick polycrystalline CdTe films were deposited by magnetron sputtering using a variable argon pressure, 2.5 ≤ pAr ≤ 50 mTorr, and a fixed substrate temperature, Ts = 230°C. Real time spectroscopic ellipsometry (RTSE) was performed during deposition in order to analyze the nucleation and coalescence, as well as the evolution of the surface roughness thickness ds with bulk layer thickness db and the depth profile in the void volume fraction fv. A linear correlation was found between the final ds value measured by RTSE at the end of deposition and the root-mean-square (rms) surface roughness measured by atomic force microscopy (AFM) ex situ after deposition. A monotonic decrease in RTSE-determined roughness thickness is observed with decreasing Ar pressure from 18 to 2.5 mTorr. The lowest pressure also leads to the greatest bulk layer structural uniformity; in this case, fv increases to 0.04 with increasing CdTe thickness to 1 μm. The photovoltaic performance of CdTe films prepared with the lowest pressure of pAr = 2.5 mTorr is compared with that of previously optimized CdTe solar cells with pAr = 10 mTorr.


2002 ◽  
Vol 715 ◽  
Author(s):  
Dean H. Levi ◽  
Brent P. Nelson ◽  
John D. Perkins

AbstractIn-situ real-time spectroscopic ellipsometry (RTSE) provides detailed information on the evolution of the structural and optical properties of Si:H films during film growth. We have used in-situ RTSE to characterize the film morphology and crystallinity of hot-wire CVD (HWCVD) Si:H films as a function of hydrogen dilution R=[H]/[H+SiH4], substrate temperature Ts, and film thickness db. Transitions from one mode of film growth to another are indicated by abrupt changes in the magnitude of the surface roughness during film growth. The degree of crystallinity of the film can be determined from the bulk dielectric function. We have studied the growth parameter space consisting of R from 0 to 12, Ts from 150°C to 550°C, and db from 0 to 1 um. For each set of R and Ts values, the structural evolution of the film can be characterized by the shape of the surface roughness thickness ds versus bulk thickness db curve. In contrast to studies done by Collins et al on PECVD growth of Si:H films, our studies of HWCVD growth find no conditions where ds remains constant after coalescence of the initial nucleation centers. Most of the films grown within the range of parameters studied exhibit a secondary nucleation and coalescence signature. The transition between a-Si:H and uc-Si:H growth is near the R=3 to R=4 dividing line. Initial coalescence of purely uc-Si:H material doesn't occur until R>8. We have verified the RTsE crystallinity classification using ex-situ Raman scattering.


2002 ◽  
Vol 749 ◽  
Author(s):  
Vincent Barrioz ◽  
Stuart J. C. Irvine ◽  
D. Paul

ABSTRACTZnS is a material of choice in the optical coating industry for its optical properties and broad transparency range. One of the drawbacks of ZnS is that it develops high compressive intrinsic stress resulting in large residual stress in the deposited layer. This paper concentrates on the evolution of residual stress reduction in ZnS single layers, depending upon their deposition rate or the substrate temperature during deposition (i.e. 22 °C and 133 °C). The substrate preparation is addressed for consideration of layer adhesion. Residual stress of up to − 550 MPa has been observed in amorphous/poor polycrystalline ZnS layers, deposited on CMX and Float glass type substrates, by electron beam evaporation at 22 °C, with a surface roughness between 0.4 and 0.8 nm. At 133 °C, the layer had a surface roughness of 1 nm, the residual stress in the layer decreased to − 150 MPa, developing a wurtzite structure with a (002) preferred orientation. In situ stress measurements, using a novel optical approach with a laser-fibre system, were carried out to identify the various sources of stress. A description of this novel in situ stress monitor and its advantages are outlined. The residual stress values were supported by two ex situ stress techniques. The surface morphology analysis of the ZnS layers was carried out using an atomic force microscope (AFM), and showed that stress reduced layers actually gave rougher surfaces.


2012 ◽  
Vol 1376 ◽  
Author(s):  
P. Silva-Bermudez ◽  
S. Muhl ◽  
M. Rivera ◽  
S. E. Rodil

ABSTRACTIn the present work, the adsorption of albumin and fibrinogen on Ta, Nb, Ti and Zr oxidesthin films deposited on Si (100) wafers by magnetron sputtering was studied in order to get a better understanding of the correlation among the surface properties of these oxides and the protein adsorption phenomena on their surfaces. The surface energy, hydrophobicity, chemical composition, roughness and atomic order of the films were characterized. The films were immersedfor 45 minutes in single protein solutions; either albumin or fibrinogenand the adsorbed protein layer on the films was studied ex-situ in a dry ambient using bothX-ray photoelectron spectroscopy and atomic force microscopy.The adsorption of albumin and fibrinogen on the films modified the surface morphology and decreased the surface roughness for all the four different metal oxides. The XPS results confirmed the presence of the protein on the surface of the films and showed that the two proteins studied were adsorbed without undergoing a major chemical decomposition. A correlation between the surface roughness,the polar component of the surface energy of the films and the atomic percentage of nitrogen on the films after protein adsorption, an indirect signal of the amount of protein adsorbed, was found for albumin and fibrinogen adsorption on Ta, Nb and Ti oxides; the largest the roughness or the polar component the largest amount of adsorbed protein.


1993 ◽  
Vol 324 ◽  
Author(s):  
John A. Woollam ◽  
Blaine Johs ◽  
William A. McGahan ◽  
Paul G. Snyder ◽  
Jeffrey Hale ◽  
...  

AbstractWe briefly review the optics of ellipsometry, followed by discussions of a series of example applications of the technique including single films on a substrate; multilayer stacks common to silicon integrated circuit fabrication; flat panel display materials, and in situ semiconductor growth and deposition control.


Procedia CIRP ◽  
2016 ◽  
Vol 46 ◽  
pp. 254-257 ◽  
Author(s):  
Vigneashwara Pandiyan ◽  
Tegoeh Tjahjowidodo ◽  
Meena Periya Samy

2019 ◽  
Vol 2019 (0) ◽  
pp. 606
Author(s):  
Takashi Misaka ◽  
Jonny Herwan ◽  
Oleg Ryabov ◽  
Seisuke Kano ◽  
Hiroyuki Sawada ◽  
...  

2011 ◽  
Vol 299-300 ◽  
pp. 1167-1170 ◽  
Author(s):  
Gaurav Bartarya ◽  
S.K. Choudhury

Forces in Hard turning can be used to evaluate the performance of the process. Cutting parameters have their own influence on the cutting forces on the tool. The present work is an attempt to develop a force prediction model based on full factorial design of experiments for machining EN31 steel (equivalent to AISI 52100 steel) using uncoated CBN tool. The force and surface roughness regression models were developed using the data from various set of experiments with in the range of parameters selected. The predictions from the models were compared with the measured force and surface roughness values. The ANOVA analysis was undertaken to test the goodness of fit of data.


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