Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

2016 ◽  
Vol 109 (2) ◽  
pp. 023301 ◽  
Author(s):  
Shun Wang ◽  
Xu Gao ◽  
Ya-Nan Zhong ◽  
Zhong-Da Zhang ◽  
Jian-Long Xu ◽  
...  
Keyword(s):  
Floating Gate ◽  
Physical Implication ◽  
Nonvolatile Memories ◽  
Transition Voltage

Photon-energy-dependent light effects in organic nano-floating-gate nonvolatile memories

2014 ◽  
Vol 15 (10) ◽  
pp. 2486-2491 ◽  
Author(s):  
Xu Gao ◽  
Chang-Hai Liu ◽  
Xiao-Jian She ◽  
Qin-Liang Li ◽  
Jie Liu ◽  
...  
Keyword(s):  
Photon Energy ◽  
Floating Gate ◽  
Nonvolatile Memories ◽  
Light Effects ◽  
Energy Dependent

Reliability of Flash Nonvolatile Memories

2001 ◽  
Vol 11 (03) ◽  
pp. 719-750 ◽  
Author(s):  
Neal Mielke ◽  
Jian Chen
Keyword(s):  
Flash Memory ◽  
High Stress ◽  
Floating Gate ◽  
Engineering Optimization ◽  
Degradation Mechanisms ◽  
Hot Carrier ◽  
Experience Levels ◽  
Nonvolatile Memories ◽  
Processing Steps ◽  
Dielectric Degradation

This paper reviews the reliability of Flash nonvolatile memories, with particular to dielectric degradation. These memories are manufactured with the same materials and processing steps as are other types of IC's, but unique features of Flash memories create very different reliability challenges. These features stem from the three unique functions of the Flash cell: to program, to erase, and to retain charge for years. Each of these functions has its own characteristic degradation mechanisms. A fascinating aspect of Flash reliability is the insight that can be gained into dielectric degradation mechanisms. In normal use, Flash dielectries experience levels of electric field, hot-carrier bombardment, and charge fluence that other IC processes experience only in capacitor breakdown studies and other accelerated stresses. Catastrophic breakdown does not occur, however, because the stress from charging and discharging the floating-gate capacitor is fundamentally self-limiting. At the same time, dielectric leakage of a few electrons a day can be measurable in a Flash cell. The combination of high stress, self-limiting degradation, and high leakage sensitivity allows prebreakdown dielectric degradation to be studied in great detail. Although Flash memory technology poses unique development challenges, engineering optimization can make these memories highly reliable.

Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate

2013 ◽  
Vol 102 (2) ◽  
pp. 023303 ◽  
Author(s):  
Xu Gao ◽  
Xiao-Jian She ◽  
Chang-Hai Liu ◽  
Qi-Jun Sun ◽  
Jie Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Floating Gate ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memories ◽  
Effect Transistor
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