Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

L. Höglund; D. Z. Ting; A. Khoshakhlagh; A. Soibel; A. Fisher; C. J. Hill; S. Keo; S. Rafol; S. D. Gunapala

doi:10.1063/1.4954901

Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Applied Physics Letters ◽

10.1063/1.4954901 ◽

2016 ◽

Vol 108 (26) ◽

pp. 263504 ◽

Cited By ~ 6

Author(s):

L. Höglund ◽

D. Z. Ting ◽

A. Khoshakhlagh ◽

A. Soibel ◽

A. Fisher ◽

...

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Proton Radiation ◽

Midwave Infrared

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Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Applied Physics Letters ◽

10.1063/1.4835055 ◽

2013 ◽

Vol 103 (22) ◽

pp. 221908 ◽

Cited By ~ 67

Author(s):

L. Höglund ◽

D. Z. Ting ◽

A. Khoshakhlagh ◽

A. Soibel ◽

C. J. Hill ◽

...

Keyword(s):

Radiative Recombination ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Midwave Infrared

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Microwave transmission method for measuring minority-carrier lifetime in silicon slices

Electronics Letters ◽

10.1049/el:19710516 ◽

1971 ◽

Vol 7 (25) ◽

pp. 754

Author(s):

R.E. Thomas ◽

V. Makios ◽

S. Ogletree ◽

R. Mckillican

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Transmission Method ◽

Microwave Transmission

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Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

Physical Review Materials ◽

10.1103/physrevmaterials.3.065403 ◽

2019 ◽

Vol 3 (6) ◽

Cited By ~ 9

Author(s):

Zhihao Xu ◽

Denis A. Shohonov ◽

Andrew B. Filonov ◽

Kazuhiro Gotoh ◽

Tianguo Deng ◽

...

Keyword(s):

Atomic Hydrogen ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Marked Enhancement

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OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3083211 ◽

2021 ◽

pp. 1-7

Author(s):

Giovanna Sozzi ◽

Sergio Sapienza ◽

Roberta Nipoti ◽

Giovanni Chiorboli

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime

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High minority carrier lifetime in amorphous-crystalline silicon heterostructure using triode rf PECVD

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc45281.2020.9300444 ◽

2020 ◽

Author(s):

Pratish Mahtani ◽

Sara M. Almenabawy ◽

Rajiv Prinja ◽

Geetu Sharma ◽

Nazir P. Kherani

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Crystalline Silicon ◽

Minority Carrier Lifetime

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Behavior of Photo Induced Minority Carrier Lifetime in PN Junction with Different Bias Voltages

Energy Procedia ◽

10.1016/j.egypro.2015.12.303 ◽

2015 ◽

Vol 84 ◽

pp. 110-117 ◽

Cited By ~ 1

Author(s):

T. Sameshima ◽

M. Hasumi

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Pn Junction

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Use of transient capacitance measurements for direct determination of minority‐carrier lifetime in low‐doped metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.95008 ◽

1984 ◽

Vol 45 (1) ◽

pp. 52-53 ◽

Cited By ~ 2

Author(s):

U. Efron ◽

P. O. Braatz

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Direct Determination ◽

Minority Carrier Lifetime ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Structures ◽

Transient Capacitance

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Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/6/301 ◽

2002 ◽

Vol 17 (6) ◽

pp. 503-509 ◽

Cited By ~ 13

Author(s):

Delong Cui ◽

Seth M Hubbard ◽

Dimitris Pavlidis ◽

Andreas Eisenbach ◽

Cyril Chelli

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Bipolar Transistors ◽

Carbon Doped

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Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells

2008 33rd IEEE Photovolatic Specialists Conference ◽

10.1109/pvsc.2008.4922525 ◽

2008 ◽

Author(s):

Min Gu Kang ◽

Sung Ju Tark ◽

Joon Sung Lee ◽

Jeong Chul Lee ◽

Kyung Hoon Yoon ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Silicon Wafer ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Heterojunction Solar Cells ◽

Silicon Heterojunction Solar Cells

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Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.440.82 ◽

2013 ◽

Vol 440 ◽

pp. 82-87 ◽

Cited By ~ 2

Author(s):

Mohammad Jahangir Alam ◽

Mohammad Ziaur Rahman

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Multicrystalline Silicon ◽

Recombination Lifetime ◽

Spatially Resolved ◽

Carrier Recombination ◽

Negative Role ◽

P Type ◽

The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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