Comparison of low frequency charge noise in identically patterned Si/SiO2 and Si/SiGe quantum dots

2016 ◽  
Vol 108 (25) ◽  
pp. 253108 ◽  
Author(s):  
Blake M. Freeman ◽  
Joshua S. Schoenfield ◽  
HongWen Jiang
Keyword(s):  
Quantum Dots ◽  
Low Frequency ◽  
Charge Noise

scholarly journals Low-frequency charge noise in Si/SiGe quantum dots

2019 ◽  
Vol 100 (16) ◽  
Author(s):  
Elliot J. Connors ◽  
JJ Nelson ◽  
Haifeng Qiao ◽  
Lisa F. Edge ◽  
John M. Nichol
Keyword(s):  
Quantum Dots ◽  
Low Frequency ◽  
Charge Noise

scholarly journals Erratum: Low-frequency charge noise in Si/SiGe quantum dots [Phys. Rev. B 100 , 165305 (2019)]

2020 ◽  
Vol 102 (3) ◽  
Author(s):  
Elliot J. Connors ◽  
JJ Nelson ◽  
Haifeng Qiao ◽  
Lisa F. Edge ◽  
John M. Nichol
Keyword(s):  
Quantum Dots ◽  
Low Frequency ◽  
Charge Noise

Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

2015 ◽  
Vol 107 (23) ◽  
pp. 233104 ◽  
Author(s):  
Jie You ◽  
Hai-Ou Li ◽  
Ke Wang ◽  
Gang Cao ◽  
Xiang-Xiang Song ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Frequency ◽  
Charge Noise

scholarly journals Two-axis quantum control of a fast valley qubit in silicon

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Nicholas E. Penthorn ◽  
Joshua S. Schoenfield ◽  
John D. Rooney ◽  
Lisa F. Edge ◽  
HongWen Jiang
Keyword(s):  
Quantum Dots ◽  
Quantum Control ◽  
Pulse Sequences ◽  
Operation Time ◽  
Double Quantum ◽  
Energy Splitting ◽  
Electron Charge ◽  
Process Tomography ◽  
High Degree ◽  
Charge Noise

Abstract Quantum dots in silicon are a promising architecture for semiconductor quantum computing due to a high degree of electric control and compatibility with existing silicon fabrication processes. Although electron charge and spin are prominent methods for encoding the qubit state, valley states in silicon can also store quantum information via valley-orbit coupling with protection against charge noise. By observing coherent oscillations between valley states in a Si/SiGe double quantum dot device tuned to the two-electron charge configuration, we measure the valley energy splitting in both quantum dots individually. We further demonstrate two-axis quantum control of the valley qubit using gated pulse sequences with X and Z rotations occurring within a fast operation time of 300 ps. This control is used to completely map out the surface of the Bloch sphere in a single phase-space plot that is subsequently used for state and process tomography.

scholarly journals Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots

Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 20171-20178
Author(s):  
Adane Geremew ◽  
Caroline Qian ◽  
Alex Abelson ◽  
Sergey Rumyantsev ◽  
Fariborz Kargar ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Low Frequency ◽  
Colloidal Quantum Dots ◽  
Electronic Noise

We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries.

scholarly journals Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Xiang-Xiang Song ◽  
Hai-Ou Li ◽  
Jie You ◽  
Tian-Yi Han ◽  
Gang Cao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Low Frequency ◽  
Graphene Quantum Dot ◽  
Charge Noise

Silicon quantum dots embedded in amorphous SiC matrix for third-generation solar cells: Microstructure control by RF discharge power

2015 ◽  
Vol 08 (05) ◽  
pp. 1550054 ◽  
Author(s):  
Qijin Cheng ◽  
Igor Levchenko ◽  
Denyuan Song ◽  
Shuyan Xu ◽  
Kostya Ken Ostrikov
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Inductively Coupled Plasma ◽  
Low Frequency ◽  
Rf Discharge ◽  
Third Generation ◽  
Silicon Quantum Dots ◽  
Inductively Coupled ◽  
Carbide Matrix ◽  
Photovoltaic Solar Cells

A low-frequency (460 kHz), low-pressure, thermally non-equilibrium, high-density inductively coupled plasma (ICP) has been used to synthesize a novel, advanced photovoltaic material suitable for fabrication of third-generation solar cells. Silicon quantum dots (SQDs) embedded in an amorphous silicon carbide matrix were prepared at a very low substrate temperature of approximately 200°C without any hydrogen dilution. The effect of the radio-frequency (RF) power of the plasma discharge on the morphology and structure of the embedded quantum dots was studied. A brief discussion on the possible mechanisms of the quantum dot formation in the ICP is presented. This study is relevant to third-generation photovoltaic solar cells.

Low-frequency charge noise in suspended aluminum single-electron transistors

2007 ◽  
Vol 91 (3) ◽  
pp. 033107 ◽  
Author(s):  
T. F. Li ◽  
Yu. A. Pashkin ◽  
O. Astafiev ◽  
Y. Nakamura ◽  
J. S. Tsai ◽  
...  
Keyword(s):  
Low Frequency ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Charge Noise
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