scholarly journals Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065313 ◽  
Author(s):  
Yasushi Hoshino ◽  
Gosuke Yachida ◽  
Kodai Inoue ◽  
Taiga Toyohara ◽  
Jyoji Nakata
Keyword(s):  
Direct Synthesis ◽  
Low Energy ◽  
Oxygen Implantation ◽  
Ultrathin Soi

Oxide formation on chromium metal surfaces by low-energy oxygen implantation at room temperature

2017 ◽  
Vol 636 ◽  
pp. 225-231 ◽  
Author(s):  
Robert Peter ◽  
Iva Saric ◽  
Ivna Kavre Piltaver ◽  
Ivana Jelovica Badovinac ◽  
Mladen Petravic
Keyword(s):  
Metal Surfaces ◽  
Room Temperature ◽  
Low Energy ◽  
Oxide Formation ◽  
Oxygen Implantation

Deep-learning-based direct synthesis of low-energy virtual monoenergetic images with multi-energy CT

2021 ◽  
Vol 8 (05) ◽  
Author(s):  
Hao Gong ◽  
Jeffrey F. Marsh ◽  
Karen N. D’Souza ◽  
Nathan R. Huber ◽  
Kishore Rajendran ◽  
...  
Keyword(s):  
Deep Learning ◽  
Direct Synthesis ◽  
Low Energy ◽  
Virtual Monoenergetic Images ◽  
Monoenergetic Images

A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+implantation

2016 ◽  
Vol 49 (31) ◽  
pp. 315106 ◽  
Author(s):  
Yasushi Hoshino ◽  
Gosuke Yachida ◽  
Kodai Inoue ◽  
Taiga Toyohara ◽  
Jyoji Nakata
Keyword(s):  
Low Energy ◽  
Ultrathin Soi

Ultrathin Soi Structures by Low Energy Oxygen Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Fereydoon Namavar ◽  
E. Cortesi ◽  
B. Buchanan ◽  
J. M. Manke ◽  
N. M. Kalkhoran
Keyword(s):  
Low Energy ◽  
Radiation Hardness ◽  
Silicon On Insulator ◽  
Great Promise ◽  
High Quality ◽  
Fully Depleted ◽  
Device Structures ◽  
Ultrathin Soi ◽  
Radiation Hard ◽  
Standard Energy

ABSTRACTAlthough silicon-on-insulator (SOI) materials made by standard energy (150–200 keV) SIMOX processes have shown great promise for meeting the needs of radiation hard microelectronics, there are still problems relating to the radiation hardness and economic viability of standard SIMOX. A low energy SIMOX (LES) process reduces cost and improves radiation hardness and increased throughput of any implanter because much smaller doses are required. In addition, the process is uniquely able to produce high quality thin SIMOX structures that are of particular interest for fully depleted device structures. In this paper, we address the formation of high quality ultrathin SIMOX structures by low energy implantation.

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