Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

2016 ◽  
Vol 108 (23) ◽  
pp. 233505 ◽  
Author(s):  
Minkyu Cho ◽  
Jung-Hun Seo ◽  
Dong-Wook Park ◽  
Weidong Zhou ◽  
Zhenqiang Ma
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capacitance Voltage ◽  
Flexible Metal

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

2020 ◽  
Vol 26 (42) ◽  
pp. 9126-9156 ◽  
Author(s):  
Jeong‐Wan Jo ◽  
Seung‐Han Kang ◽  
Jae Sang Heo ◽  
Yong‐Hoon Kim ◽  
Sung Kyu Park
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Solution Methods ◽  
Flexible Metal

scholarly journals Frontispiece: Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

2020 ◽  
Vol 26 (42) ◽  
Author(s):  
Jeong‐Wan Jo ◽  
Seung‐Han Kang ◽  
Jae Sang Heo ◽  
Yong‐Hoon Kim ◽  
Sung Kyu Park
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Solution Methods ◽  
Flexible Metal

Capacitance‐voltage studies of InP metal‐oxide‐semiconductor devices irradiated with4He+ions

1989 ◽  
Vol 66 (9) ◽  
pp. 4201-4205 ◽  
Author(s):  
C. C. Tin ◽  
P. A. Barnes ◽  
J. R. Williams ◽  
C. S. Patuwathavithane ◽  
P. K. Van Staagen
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capacitance Voltage
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