Capacitance‐voltage studies of InP metal‐oxide‐semiconductor devices irradiated with4He+ions

C. C. Tin; P. A. Barnes; J. R. Williams; C. S. Patuwathavithane; P. K. Van Staagen

doi:10.1063/1.343984

Capacitance‐voltage studies of InP metal‐oxide‐semiconductor devices irradiated with4He+ions

Journal of Applied Physics ◽

10.1063/1.343984 ◽

1989 ◽

Vol 66 (9) ◽

pp. 4201-4205 ◽

Cited By ~ 3

Author(s):

C. C. Tin ◽

P. A. Barnes ◽

J. R. Williams ◽

C. S. Patuwathavithane ◽

P. K. Van Staagen

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Voltage

Download Full-text

On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Journal of Applied Physics ◽

10.1063/1.4980170 ◽

2017 ◽

Vol 121 (14) ◽

pp. 144504 ◽

Cited By ~ 7

Author(s):

Abhitosh Vais ◽

Jacopo Franco ◽

Dennis Lin ◽

Vamsi Putcha ◽

Sonja Sioncke ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Capacitance Voltage ◽

Voltage Hysteresis ◽

Defect Levels

Download Full-text

Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

Applied Physics Letters ◽

10.1063/1.4953458 ◽

2016 ◽

Vol 108 (23) ◽

pp. 233505 ◽

Cited By ~ 10

Author(s):

Minkyu Cho ◽

Jung-Hun Seo ◽

Dong-Wook Park ◽

Weidong Zhou ◽

Zhenqiang Ma

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Voltage ◽

Flexible Metal

Download Full-text

Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

Journal of Applied Physics ◽

10.1063/1.4729331 ◽

2012 ◽

Vol 111 (12) ◽

pp. 124104 ◽

Cited By ~ 14

Author(s):

É. O’Connor ◽

K. Cherkaoui ◽

S. Monaghan ◽

D. O’Connell ◽

I. Povey ◽

...

Keyword(s):

Metal Oxide ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gaas Substrates ◽

Capacitance Voltage

Download Full-text

Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

Download Full-text

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

Download Full-text

Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

Download Full-text

Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

Download Full-text

Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

Download Full-text

Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Cited By ~ 4

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

Download Full-text

Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) ◽

10.1109/tencon.1999.818624 ◽

2003 ◽

Author(s):

Q.D. Mohd Khosru ◽

Md. Nasir Uddin ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Charge Relaxation ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Relaxation Characteristics ◽

Trapped Charge

Download Full-text