Extraction of high charge density of states in electrolyte-gated polymer thin-film transistor with temperature-dependent measurements

2016 ◽  
Vol 108 (20) ◽  
pp. 203302 ◽  
Author(s):  
Jiyoul Lee
Keyword(s):  
Thin Film ◽  
Charge Density ◽  
Density Of States ◽  
Thin Film Transistor ◽  
Temperature Dependent ◽  
Polymer Thin Film ◽  
High Charge ◽  
High Charge Density

Rendering High Charge Density of States in Ionic Liquid-Gated MoS2 Transistors

2014 ◽  
Vol 118 (31) ◽  
pp. 18278-18282 ◽  
Author(s):  
Yeonsung Lee ◽  
Jiyoul Lee ◽  
Sunkook Kim ◽  
Ho Seok Park
Keyword(s):  
Ionic Liquid ◽  
Charge Density ◽  
Density Of States ◽  
High Charge ◽  
High Charge Density

scholarly journals Correlation of Impedance and Effective Electrode Area of Iridium Oxide Neural Electrodes

2017 ◽  
Vol 70 (9) ◽  
pp. 1016 ◽  
Author(s):  
Alexander R. Harris ◽  
Antonio G. Paolini
Keyword(s):  
Charge Density ◽  
Iridium Oxide ◽  
Neural Stimulation ◽  
Electrode Impedance ◽  
Platinum Electrodes ◽  
High Charge ◽  
State Diffusion ◽  
High Charge Density ◽  
Steady State Diffusion ◽  
Total Activation

Iridium oxide is routinely used for bionic applications owing to its high charge injection capacity. The electrode impedance at 1 kHz is typically reported to predict neural recording performance. In this article, the impedance of activated iridium oxide films (AIROFs) has been examined. The impedance of unactivated iridium electrodes was half that of platinum electrodes of similar geometry, indicating some iridium oxide was present on the electrode surface. A two time constant equivalent circuit was used to model the impedance of activated iridium. The impedance at low and intermediate frequencies decreased with increasing number of activation pulses and total activation charge. The impedance at 12 Hz correlated with the steady-state diffusion electroactive area. The impedance at 12 Hz also correlated with the charge density of the electrode. The high charge density and low impedance of AIROFs may provide improved neural stimulation and recording properties compared with typically used platinum electrodes.

Attaching high charge density metal ions to surfaces and biomolecules. Reaction chemistry of hypodentate cobalt diamine complexes

2013 ◽  
Vol 42 (44) ◽  
pp. 15617 ◽  
Author(s):  
Aaron R. Funk ◽  
Efram Goldberg ◽  
Eddie L. Chang ◽  
Scott A. Trammell ◽  
D. Andrew Knight
Keyword(s):  
Metal Ions ◽  
Charge Density ◽  
High Charge ◽  
High Charge Density

Fast Development of Self‐Assembled, Highly Oriented Polymer Thin Film and Observation of Dual Sensing Behavior of Thin Film Transistor for Ammonia Vapor

2019 ◽  
Vol 220 (11) ◽  
pp. 1900010
Author(s):  
Praveen Kumar Sahu ◽  
Lalit Chandra ◽  
Rajiv K. Pandey ◽  
Niraj Singh Mehta ◽  
R. Dwivedi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Ammonia Vapor ◽  
Oriented Polymer ◽  
Polymer Thin Film ◽  
Fast Development ◽  
Self Assembled ◽  
Dual Sensing

scholarly journals Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Materials ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 1739 ◽  
Author(s):  
Kyungsoo Jang ◽  
Youngkuk Kim ◽  
Joonghyun Park ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Energy Density ◽  
Excimer Laser ◽  
Density Of States ◽  
Silicon Germanium ◽  
Structural Characteristics ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Starting Point

We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si1−xGex) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH4 and GeH4 gas mixture, and a Si1−xGex thin film was crystallized using different excimer laser densities. We found that the optimum energy density to obtain maximum grain size depends on the Ge content in the poly-Si1−xGex thin film; we also confirmed that the grain size of the poly-Si1−xGex thin film is more sensitive to energy density than the poly-Si thin film. The maximum grain size of the poly-Si1−xGex film was 387.3 nm for a Ge content of 5.1% at the energy density of 420 mJ/cm2. Poly-Si1−xGex TFT with different Ge concentrations was fabricated, and their structural characteristics were analyzed using Raman spectroscopy and atomic force microscopy. The results showed that, as the Ge concentration increased, the electrical characteristics, such as on current and sub-threshold swing, were deteriorated. The electrical characteristics were simulated by varying the density of states in the poly-Si1−xGex. From this density of states (DOS), the defect state distribution connected with Ge concentration could be identified and used as the basic starting point for further analyses of the poly-Si1−xGex TFTs.

Combined Alkali‐Organoammonium Structure Direction of High‐Charge‐Density Heteroatom‐Containing Aluminophosphate Molecular Sieves

2019 ◽  
Vol 58 (27) ◽  
pp. 9032-9037 ◽  
Author(s):  
Seungwan Seo ◽  
Nak Ho Ahn ◽  
Jeong Hwan Lee ◽  
Lisa M. Knight ◽  
Jaime G. Moscoso ◽  
...  
Keyword(s):  
Charge Density ◽  
Molecular Sieves ◽  
High Charge ◽  
Aluminophosphate Molecular Sieves ◽  
High Charge Density

scholarly journals Expanding the portfolio of tribo-positive materials: Aniline formaldehyde condensates for high charge density triboelectric nanogenerators

Nano Energy ◽  
2020 ◽  
Vol 67 ◽  
pp. 104291 ◽  
Author(s):  
Pengfei Zhao ◽  
Navneet Soin ◽  
Amit Kumar ◽  
Lin Shi ◽  
Shaoliang Guan ◽  
...  
Keyword(s):  
Charge Density ◽  
High Charge ◽  
High Charge Density ◽  
Triboelectric Nanogenerators ◽  
Positive Materials
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