Giant magnetoresistance and superparamagnetism in DyxFe100-x nanogranular magnetic thin films at room temperature

2016 ◽  
Author(s):  
Laxman Mekala ◽  
Muhammed Shameem P. V. ◽  
Dushyanth Singh ◽  
M. Senthil Kumar
Keyword(s):  
Thin Films ◽  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Magnetic Thin Films

Giant Magnetoresistance in Single Layer and Multilayer Phase Separating Alloy Films

1993 ◽  
Vol 313 ◽  
Author(s):  
S. Hossain ◽  
A. Waknis ◽  
D. Seale ◽  
M. Tan ◽  
M.R. Parker ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Dependence ◽  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Single Layer ◽  
Multilayer Films ◽  
Equilibrium Conditions ◽  
Ferromagnetic Layers ◽  
Novel Processing ◽  
New Phase

ABSTRACTThe phenomenon of giant magnetoresistance (GMR), previously measured only in multilayer films comprising ferromagnetic layers separated by nonmagnetic spacers, has recently been observed in single layer ‘granular’ alloy thin films prepared by cosputtering a ferromagnet and a nonmagnet which tend to phase separate (cluster) under equilibrium conditions. We have systematically studied the magnetoresistance of two new phase separating GMR systems (Ni66Fe16Co18-Ag and Co9oFelo-Ag) both of which exhibit large room temperature GMR (>11% and >14%, respectively). We have also attempted to influence the details of the field dependence of the magnetoresistance in the previously studied Co-Ag system by employing novel processing methods including interrupted sputtering and layering of the Co-Ag alloy with Cu spacers.

Microstructure and giant magnetoresistance in granular and multilayer magnetic thin films

1995 ◽  
Vol 33 (10-11) ◽  
pp. 1667-1677 ◽  
Author(s):  
N. Thangaraj ◽  
Kannan M. Krishnan ◽  
R.F.C. Farrow
Keyword(s):  
Thin Films ◽  
Giant Magnetoresistance ◽  
Magnetic Thin Films

Organic Based Magnetic Thin Films by Low Temperature CVD

2005 ◽  
Vol 871 ◽  
Author(s):  
Ruth Shima Edelstein ◽  
Jung-Woo Yoo ◽  
N. P. Raju ◽  
Jeremy D. Bergeson ◽  
Konstantin I. Pokhodnya ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Spin Valve ◽  
Chemical Vapor ◽  
Magnetic Ordering ◽  
Magnetic Thin Films ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Paramagnetic Material ◽  
Vanadium Tetracyanoethylene

AbstractWe describe how the composition of an organic - based magnet can be controlled by varying the Chemical Vapor Deposition (CVD) conditions. A study was conducted for the Co2(CO)8/ TCNE system to form cobalt tetracyanoethylene [Co(TCNE)x, x∼2, a paramagnetic material], and for the V(CO)6/ TCNEx system to form vanadium tetracyanoethylene [V(TCNE)x, x∼2, a ferrimagnetic material]. Thin V(TCNE)x, x∼2 films (∼0.05-0.5 μm) with room temperature conductivity of 10-4<σRT<10-3S/cm and magnetic ordering temperature Tc of up to ∼400K were deposited. The V(TCNE)x, x∼2 thin films have the potential for incorporation in a spin-valve device as one of the magnetic contacts, and are promising candidates to form optically controlled magnetic-based structures.

Giant magnetoresistance induced by spin-correlation scattering in magnetic thin films and other compounds

1996 ◽  
Vol 79 (8) ◽  
pp. 5162 ◽  
Author(s):  
Liang-Jian Zou ◽  
X. G. Gong ◽  
Qing-Qi Zheng ◽  
C. Y. Pan
Keyword(s):  
Thin Films ◽  
Giant Magnetoresistance ◽  
Spin Correlation ◽  
Magnetic Thin Films

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Sign in / Sign up

Export Citation Format

Share Document