In-situ SiNx/InN structures for InN field-effect transistors

2016 ◽  
Vol 108 (14) ◽  
pp. 142102 ◽  
Author(s):  
Ch. Zervos ◽  
A. Adikimenakis ◽  
P. Beleniotis ◽  
A. Kostopoulos ◽  
M. Kayambaki ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors

Low Temperature Device Processing Technology for II-VI Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
R.M. Kolbas ◽  
B.P. Sneed ◽  
J.F. Schetzina
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Layers ◽  
Processing Technologies ◽  
Device Processing ◽  
Device Structures ◽  
Lift Off ◽  
Processing Steps

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).

scholarly journals In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation

2020 ◽  
Vol 26 (S2) ◽  
pp. 294-296
Author(s):  
Gregor Hlawacek ◽  
Zahra Fekri ◽  
Panish Chava ◽  
Artur Erbe
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Irradiation ◽  
In Situ Characterization
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