High voltage surface potential measurements in ambient conditions: Application to organic thin-film transistor injection and transport characterization

2016 ◽  
Vol 119 (12) ◽  
pp. 125501 ◽  
Author(s):  
Grégoire de Tournadre ◽  
Frédéric Reisdorffer ◽  
Reinhold Rödel ◽  
Olivier Simonetti ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Ambient Conditions ◽  
Surface Potential Measurements

Flexible solution-processed high-voltage organic thin film transistor

2017 ◽  
Vol 33 (2) ◽  
pp. 149-160 ◽  
Author(s):  
Andy Shih ◽  
Elizabeth Schell ◽  
Akintunde Ibitayo Akinwande
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Solution Processed ◽  
Image Position

Abstract

scholarly journals Solution-Processed High-Voltage Organic Thin Film Transistor

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2961-2966 ◽  
Author(s):  
Andy Shih ◽  
Akintunde Ibitayo Akinwande
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Sem Analysis ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Parylene C ◽  
Solution Processed ◽  
Device Architecture ◽  
High K

ABSTRACTA 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) based high-voltage organic thin film transistor (HVOTFT) has been demonstrated via a low temperature (< 100°C) solution-processed fabrication method on borosilicate glass. High-voltage is an area not well developed in the organic transistor field and can be of benefit to various applications requiring such an operating range beyond that of conventional thin film transistors. Here, our HVOTFT exhibited a mobility μ of 0.005 cm2 V-1 s-1 and a breakdown voltage of VDS > 120 V, the latter being due a space-charge limiting device architecture in which the channel is partially gated. Non-saturating I-V characteristic behavior was observed. This is in contrast with our vacuum-deposited pentacene HVOTFTs which exhibited breakdown voltages of VDS > 400 V. TIPS-pentacene was grown via a drop-casting deposition, with its crystallinity and grain size deduced under XRD and SEM analysis. The HVOTFT was fabricated with a dielectric stack of a high-k Bi1.5Zn1Nb1.5O7 (BZN) and parylene-C.

Solution-Processed and Self-Assembled Monolayer-Treated High-Voltage Organic Thin Film Transistors for Flexible MEMS Integration

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1877-1882
Author(s):  
Andy Shih ◽  
Akintunde Ibitayo Akinwande
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Fold Increase ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled ◽  
Flexible Applications

ABSTRACTWe report a 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) solution-processed high-voltage organic thin film transistor (HVOTFT) with a large breakdown voltage of |VDS| > 450 V, a three-fold increase from previous results. An offset channel architecture and an organosilane-based self-assembled monolayer (SAM) treatment were used to achieve large breakdown voltages. Solution-processed HVOTFTs will enable novel high-voltage and flexible applications. Reliability of the HVOTFT under high-field stress was studied in the context of threshold and onset to conduction voltages.

Physically Based Compact Mobility Model for Organic Thin-Film Transistor

2016 ◽  
Vol 63 (5) ◽  
pp. 2057-2065 ◽  
Author(s):  
T. K. Maiti ◽  
L. Chen ◽  
H. Zenitani ◽  
H. Miyamoto ◽  
M. Miura-Mattausch ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Mobility Model ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Physically Based
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