Critical thickness for stripe domain formation in FePt thin films: Dependence on residual stress

2016 ◽  
Vol 119 (8) ◽  
pp. 083906 ◽  
Author(s):  
N. R. Álvarez ◽  
J. E. Gómez ◽  
A. E. Moya Riffo ◽  
M. A. Vicente Álvarez ◽  
A. Butera
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Critical Thickness ◽  
Domain Formation ◽  
Stripe Domain ◽  
Fept Thin Films

Atomically flat surface of (001) textured FePt thin films by residual stress control

2015 ◽  
Vol 354 ◽  
pp. 201-205 ◽  
Author(s):  
S.H. Liu ◽  
S.N. Hsiao ◽  
C.L. Chou ◽  
S.K. Chen ◽  
H.Y. Lee
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Flat Surface ◽  
Stress Control ◽  
Atomically Flat ◽  
Fept Thin Films

scholarly journals Critical Thickness of (001) Texture Induction in FePt Thin Films on Glass Substrates

2011 ◽  
Vol 47 (10) ◽  
pp. 3633-3636 ◽  
Author(s):  
J. K. Mei ◽  
F. T. Yuan ◽  
W. M. Liao ◽  
A. C. Sun ◽  
Y. D. Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Thickness ◽  
Glass Substrates ◽  
Fept Thin Films

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Residual stress and mechanical properties of polyimide thin films

2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress

The Materials Science of “Permeable Polysilicon” Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
George M Dougherty ◽  
Timothy Sands ◽  
Albert P. Pisano
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Materials Science ◽  
Single Step ◽  
Process Window ◽  
Silicon Thin Films ◽  
Growth Regime ◽  
Deposition Parameters ◽  
Simple Kinetic Model ◽  
The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Relaxation of residual stress-controlled thermopower factor in transparent-flexible Ti-doped ZnO thin films

2021 ◽  
Author(s):  
Dai Cao Truong ◽  
Somporn Thaowonkaew ◽  
Pennapa Muthitamongkol ◽  
Mati Horprathum ◽  
Manish Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Zno Thin Films ◽  
Doped Zno
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