Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

2016 ◽  
Vol 108 (8) ◽  
pp. 083102 ◽  
Author(s):  
Youngseo Park ◽  
Hyoung Won Baac ◽  
Junseok Heo ◽  
Geonwook Yoo
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Thermally Activated ◽  
Trap Charges

Maskless Device Fabrication and Laser-Induced Doping in MoS2 Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist

2021 ◽  
Vol 13 (4) ◽  
pp. 5399-5405
Author(s):  
Alonit Kafri ◽  
Debopriya Dutta ◽  
Subhrajit Mukherjee ◽  
Pranab K. Mohapatra ◽  
Ariel Ismach ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Thermally Activated

scholarly journals Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yejin Yang ◽  
Young-Soo Park ◽  
Jaemin Son ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Drain Current ◽  
Memory Window ◽  
Interface Trap ◽  
Electrical Characteristics ◽  
The Difference ◽  
Trap Charges

AbstractIn this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an n-channel FBFET, the memory window narrows (widens) from 5.47 to 3.59 V (9.24 V), as the density of the positive (negative) trap charges increases. In contrast, in the p-channel FBFET, the memory window widens (narrows) from 5.38 to 7.38 V (4.18 V), as the density of the positive (negative) trap charges increases. Moreover, we investigate the difference in the output drain current based on the interface trap charges during the memory operation.

Diffusion Instability and Tapering of Nickel Silicide Intrusions in Silicon Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
Alex Katsman ◽  
Michael Beregovsky ◽  
Yuval E. Yaish
Keyword(s):  
Thermal Annealing ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Nickel Silicide ◽  
Simultaneous Formation ◽  
Thermally Activated ◽  
Diffusion Instability ◽  
Nickel Silicides

ABSTRACTThermally activated axial intrusion of nickel silicides into the silicon nanowire (NW) from pre-patterned Ni reservoirs is used in formation of nickel silicide/silicon contacts in SiNW field effect transistors. This intrusion consists usually of different nickel silicide phases which grow simultaneously during thermal annealing (TA). The growth is often accompanied by local thickening and tapering of the NW, up to full disintegration of segments adjacent to the silicon. In the present work this process was investigated in SiNWs of 30-60 nm in diameters with pre-patterned Ni electrodes after a TA at 420-440°C and times up to 15 s. The process was analyzed in the framework of a model taking into account simultaneous formation of two silicide phases in the NW. Additional flux of atoms caused by the NW curvature gradients due to different radii of different silicides was taken into account as well. For a certain set of parameters thickening of the nickel-rich silicide intrusion and tapering of the monosilicide part of intrusion were obtained.

scholarly journals High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence

2018 ◽  
Vol 28 (28) ◽  
pp. 1800340 ◽  
Author(s):  
Jan Sobus ◽  
Fatima Bencheikh ◽  
Masashi Mamada ◽  
Robert Wawrzinek ◽  
Jean‐Charles Ribierre ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Delayed Fluorescence ◽  
Thermally Activated Delayed Fluorescence ◽  
Light Emitting ◽  
Thermally Activated

Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors

2020 ◽  
Vol 35 (4) ◽  
pp. 045023
Author(s):  
Chie Hou Leong ◽  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Faraz Najam ◽  
Yun Seop Yu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Capacitance ◽  
Interface Trap ◽  
Device Modelling ◽  
Trap Charges
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