Maskless Device Fabrication and Laser-Induced Doping in MoS2 Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist

2021 ◽  
Vol 13 (4) ◽  
pp. 5399-5405
Author(s):  
Alonit Kafri ◽  
Debopriya Dutta ◽  
Subhrajit Mukherjee ◽  
Pranab K. Mohapatra ◽  
Ariel Ismach ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Thermally Activated

scholarly journals Experimental and molecular dynamics studies of an ultra-fast sequential hydrogen plasma process for fabricating phosphorene-based sensors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Rajabali ◽  
H. Asgharyan ◽  
V. Fadaei Naeini ◽  
A. Boudaghi ◽  
B. Zabihi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Dynamics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogen Plasma ◽  
Device Fabrication ◽  
Dynamics Simulation ◽  
Red Phosphorus ◽  
Large Area ◽  
Low Concentration

AbstractLow concentration phosphorene-based sensors have been fabricated using a facile and ultra-fast process which is based on an exfoliation-free sequential hydrogen plasma treatment to convert the amorphous phosphorus thin film into mono- or few-layered phosphorene sheets. These sheets have been realized directly on silicon substrates followed by the fabrication of field-effect transistors showing the low leakage current and reasonable mobility for the nano-sensors. Being capable of covering the whole surface of the silicon substrate, red phosphorus (RP) coated substrate has been employed to achieve large area phosphorene sheets. Unlike the available techniques including mechanical exfoliation, there is no need for any exfoliation and/or transfer step which is significant progress in shortening the device fabrication procedure. These phosphorene sheets have been examined using transmission electron microscopy (TEM), Scanning electron microscopy (SEM), Raman spectroscopy and atomic-force microscopy (AFM). Electrical output in different states of the crystallization as well as its correlation with the test parameters have been also extensively used to examine the evolution of the phosphorene sheets. By utilizing the fabricated devices, the sensitivity of the phosphorene based-field effect transistors to the soluble L-Cysteine in low concentrations has been studied by measuring the FET response to the different concentrations. At a gate voltage of − 2.5 V, the range of 0.07 to 0.60 mg/ml of the L-Cysteine has been distinguishably detected presenting a gate-controlled sensor for a low-concentration solution. A reactive molecular dynamics simulation has been also performed to track the details of this plasma-based crystallization. The obtained results showed that the imparted energy from hydrogen plasma resulted in a phase transition from a system containing red phosphorus atoms to the crystal one. Interestingly and according to the simulation results, there is a directional preference of crystal growth as the crystalline domains are being formed and RP atoms are more likely to re-locate in armchair than in zigzag direction.

A Zone-Casting Technique for Device Fabrication of Field-Effect Transistors Based on Discotic Hexa-peri-hexabenzocoronene

2005 ◽  
Vol 17 (6) ◽  
pp. 684-689 ◽  
Author(s):  
W. Pisula ◽  
A. Menon ◽  
M. Stepputat ◽  
I. Lieberwirth ◽  
U. Kolb ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Casting Technique

scholarly journals Diketopyrrolopyrrole Based Organic Semiconductor Materials for Field-Effect Transistors

2021 ◽  
Vol 9 ◽  
Author(s):  
Xiangyu Zou ◽  
Shuaiwei Cui ◽  
Junqiang Li ◽  
Xueling Wei ◽  
Meng Zheng
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Development Trend ◽  
Device Fabrication ◽  
Semiconductor Materials ◽  
Chemical Structures ◽  
The Past ◽  
Organic Semiconductor Materials

Over the past several decades, organic conjugated materials as semiconductors in organic field effect transistors (OFETs) have attracted more and more attention from the scientific community due to their intriguing properties of mechanical flexibility and solution processability. However, the device fabrication technique, design, and synthesis of novel organic semiconductor materials with high charge carrier mobility is crucial for the development of high-performance OFETs. In the past few years, more and more novel materials were designed and tested in the OFETs. Among which, diketopyrrolopyrrole (DPP) and its derivatives, as the electron acceptors to build donor-acceptor (D-A) typed materials, are the perspective. In this article, recently reported molecules regarding the DPP and its derivatives for OFETs application are reviewed. In addition, the relationship between the chemical structures and the performance of the device are discussed. Furthermore, an outlook of DPP-based materials in OFETs with a future design concept and the development trend are provided.

scholarly journals Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

Sensors ◽  
2021 ◽  
Vol 21 (21) ◽  
pp. 7262
Author(s):  
Yamujin Jang ◽  
Young-Min Seo ◽  
Hyeon-Sik Jang ◽  
Keun Heo ◽  
Dongmok Whang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Organic Contamination ◽  
Au Film ◽  
Graphene Field Effect Transistor ◽  
Free Graphene ◽  
Graphene Transfer ◽  
Transfer Method ◽  
Grown Graphene

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.

scholarly journals New Approaches in Flexible Organic Field-Effect Transistors (FETs) Using InClPc

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1712 ◽  
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Sergio González Habib
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Deposition Process ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Potential Applications

Organic semiconductor materials have been the center of attention because they are scalable, low-cost for device fabrication, and they have good optical properties and mechanical flexibility, which encourages their research. Organic field-effect transistors (OFETs) have potential applications, specifically in flexible and low-cost electronics such as portable and wearable technologies. In this work we report the fabrication of an InClPc base flexible bottom-gate/top-contact OFET sandwich, configured by the high-evaporation vacuum technique. The gate substrate consisted of a bilayer poly(ethylene terephthalate) (PET) and indium–tin oxide (ITO) with nylon 11/Al2O3. The device was characterized by different techniques to determine chemical stability, absorbance, transmittance, bandgap, optical properties, and electrical characteristics in order to determine its structure and operational properties. IR spectroscopy verified that the thin films that integrated the device did not suffer degradation during the deposition process, and there were no impurities that affected the charge mobility in the OFET. Also, the InClPc semiconductor IR fingerprint was present on the deposited device. Surface analysis showed evidence of a nonhomogeneous film and also a cluster deposition process of the InClPc. Using the Tauc model, the device calculated indirect bandgap transitions of approximately 1.67 eV. The device’s field effect mobility had a value of 36.2 cm2 V−1 s−1, which was superior to mobility values obtained for commonly manufactured OFETs and increased its potential to be used in flexible organic electronics. Also, a subthreshold swing of 80.64 mV/dec was achieved and was adequate for this kind of organic-based semiconductor device. Therefore, semiconductor functionality is maintained at different gate voltages and is transferred accurately to the film, which makes these flexible OFETs a good candidate for electronic applications.

Review of Recent Advances in Carbon Nanotube Biosensors Based on Field-Effect Transistors

Nano LIFE ◽  
2016 ◽  
Vol 06 (03n04) ◽  
pp. 1642006 ◽  
Author(s):  
Guangfeng Hou ◽  
Lu Zhang ◽  
Vianessa Ng ◽  
Zhizhen Wu ◽  
Mark Schulz
Keyword(s):  
Mass Production ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
High Strength ◽  
Device Fabrication ◽  
Physiochemical Properties ◽  
Recent Advances ◽  
Effect Transistor

The extraordinary physiochemical properties of carbon nanotubes (CNTs) stimulated their wide application in biosensing research. Nanotube characteristics of fast electron transport, large surface area, high strength, excellent catalytic activity and good chemical stability contribute to ultrasensitive, highly selective and stable CNT biosensors. Among the various CNT biosensors, the field-effect transistor (FET) architecture has received tremendous attention due to the advantages of high performance, miniaturization, and capability for mass production. In this paper, we address recent advances in the development of CNT biosensors based on FETs. The synthesis and properties of CNTs are discussed, along with their integration into biosensors. Recent progress in device fabrication, including CNT functionalization, attachment, and bioreceptor immobilization in CNT-based FET biosensors are highlighted. Examples in medical, food and environmental fields are illustrated.

Diffusion Instability and Tapering of Nickel Silicide Intrusions in Silicon Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
Alex Katsman ◽  
Michael Beregovsky ◽  
Yuval E. Yaish
Keyword(s):  
Thermal Annealing ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Nickel Silicide ◽  
Simultaneous Formation ◽  
Thermally Activated ◽  
Diffusion Instability ◽  
Nickel Silicides

ABSTRACTThermally activated axial intrusion of nickel silicides into the silicon nanowire (NW) from pre-patterned Ni reservoirs is used in formation of nickel silicide/silicon contacts in SiNW field effect transistors. This intrusion consists usually of different nickel silicide phases which grow simultaneously during thermal annealing (TA). The growth is often accompanied by local thickening and tapering of the NW, up to full disintegration of segments adjacent to the silicon. In the present work this process was investigated in SiNWs of 30-60 nm in diameters with pre-patterned Ni electrodes after a TA at 420-440°C and times up to 15 s. The process was analyzed in the framework of a model taking into account simultaneous formation of two silicide phases in the NW. Additional flux of atoms caused by the NW curvature gradients due to different radii of different silicides was taken into account as well. For a certain set of parameters thickening of the nickel-rich silicide intrusion and tapering of the monosilicide part of intrusion were obtained.

Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

2016 ◽  
Vol 108 (8) ◽  
pp. 083102 ◽  
Author(s):  
Youngseo Park ◽  
Hyoung Won Baac ◽  
Junseok Heo ◽  
Geonwook Yoo
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Thermally Activated ◽  
Trap Charges
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