Electron trapping mechanisms in magnetron injection guns

2016 ◽  
Vol 23 (2) ◽  
pp. 023105 ◽  
Author(s):  
Ioannis Gr. Pagonakis ◽  
Bernhard Piosczyk ◽  
Jianhua Zhang ◽  
Stefan Illy ◽  
Tomasz Rzesnicki ◽  
...  
Keyword(s):  
Electron Trapping ◽  
Magnetron Injection Guns

Effect of Long Term Stress on Hot Electron Trapping

1981 ◽  
Vol 20 (S1) ◽  
pp. 255 ◽  
Author(s):  
Heihachi Matsumoto ◽  
Kokichi Sawada ◽  
Sotoju Asai ◽  
Makoto Hirayama ◽  
Koichi Nagasawa
Keyword(s):  
Electron Trapping ◽  
Hot Electron

Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers

2021 ◽  
pp. 108066
Author(s):  
R.A. Izmailov ◽  
B.J. O'Sullivan ◽  
M. Popovici ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Trapping ◽  
Si Doped

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Optical memory in electron trapping materials

1994 ◽  
Author(s):  
Vladislav I. Zimenko ◽  
Viacheslav V. Petrov ◽  
Vasyliy G. Kravets ◽  
Vasily V. Motuz
Keyword(s):  
Optical Memory ◽  
Electron Trapping

Fowler-nordheim emission and electron trapping in pure N2O/SiH4 PECVD oxide deposited on N2, H2 and O2 plasma precleaned Si wafers

1994 ◽  
Vol 37 (9) ◽  
pp. 1671-1672 ◽  
Author(s):  
H.N. Upadhyay ◽  
R.K. Chanana ◽  
R. Dwivedi ◽  
S.K. Srivastava
Keyword(s):  
Electron Trapping ◽  
O2 Plasma
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