Temperature-dependent recombination velocity analysis on artificial small angle grain boundaries using electron beam induced current method

2016 ◽  
Vol 119 (6) ◽  
pp. 065302 ◽  
Author(s):  
Takuto Kojima ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Ronit R. Prakash ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Small Angle ◽  
Current Method ◽  
Velocity Analysis ◽  
Induced Current ◽  
Temperature Dependent ◽  
Electron Beam Induced Current ◽  
Recombination Velocity

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

2005 ◽  
Vol 52 (12) ◽  
pp. 1211-1215 ◽  
Author(s):  
J CHEN ◽  
T SEKIGUCHI ◽  
R XIE ◽  
P AHMET ◽  
T CHIKYO ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Electron Beam Induced Current

D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si

2009 ◽  
Vol 156-158 ◽  
pp. 561-565
Author(s):  
Takashi Sekiguchi ◽  
Woong Lee ◽  
Jun Chen ◽  
Bin Chen
Keyword(s):  
Electron Beam ◽  
Optical Property ◽  
Dislocation Density ◽  
Grain Boundaries ◽  
Small Angle ◽  
Room Temperature ◽  
Large Angle ◽  
Line Emission ◽  
Induced Current ◽  
Electron Beam Induced Current

We have characterized optical property of small-angle (SA) grain-boundaries (GBs) in high-pure multicrystalline Si by using cathodoluminescence (CL). Prior to CL measurement, the electrical activity of GBs were evaluated by using electron-beam-induced current (EBIC). The SA-GBs are categorized into two groups with room temperature (RT-) EBIC contrast. The SA-GBs with misorientation angle about 1º give weak RT-EBIC contrast and yield D3 and D4. The SA-GBs with 2.5º show strong EBIC contrast and yield D1 and D2. These correspondences reflect the dislocation density at the SA-GBs. We also found the curious distribution of D1 emission in some special GBs, which is now difficult to explain. It is noticed that large-angle GBs do not show any D-line emissions at all.

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 9-14 ◽  
Author(s):  
J. Chen ◽  
Takashi Sekiguchi ◽  
S. Ito ◽  
De Ren Yang
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Structural Properties ◽  
Tilt Angle ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Carrier Recombination ◽  
Electron Beam Induced Current

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

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