Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

2005 ◽  
Vol 52 (12) ◽  
pp. 1211-1215 ◽  
Author(s):  
J CHEN ◽  
T SEKIGUCHI ◽  
R XIE ◽  
P AHMET ◽  
T CHIKYO ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Electron Beam Induced Current

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 9-14 ◽  
Author(s):  
J. Chen ◽  
Takashi Sekiguchi ◽  
S. Ito ◽  
De Ren Yang
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Structural Properties ◽  
Tilt Angle ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Carrier Recombination ◽  
Electron Beam Induced Current

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si

2009 ◽  
Vol 156-158 ◽  
pp. 561-565
Author(s):  
Takashi Sekiguchi ◽  
Woong Lee ◽  
Jun Chen ◽  
Bin Chen
Keyword(s):  
Electron Beam ◽  
Optical Property ◽  
Dislocation Density ◽  
Grain Boundaries ◽  
Small Angle ◽  
Room Temperature ◽  
Large Angle ◽  
Line Emission ◽  
Induced Current ◽  
Electron Beam Induced Current

We have characterized optical property of small-angle (SA) grain-boundaries (GBs) in high-pure multicrystalline Si by using cathodoluminescence (CL). Prior to CL measurement, the electrical activity of GBs were evaluated by using electron-beam-induced current (EBIC). The SA-GBs are categorized into two groups with room temperature (RT-) EBIC contrast. The SA-GBs with misorientation angle about 1º give weak RT-EBIC contrast and yield D3 and D4. The SA-GBs with 2.5º show strong EBIC contrast and yield D1 and D2. These correspondences reflect the dislocation density at the SA-GBs. We also found the curious distribution of D1 emission in some special GBs, which is now difficult to explain. It is noticed that large-angle GBs do not show any D-line emissions at all.

Electron-beam-induced current study of grain boundaries in multicrystalline silicon

2004 ◽  
Vol 96 (10) ◽  
pp. 5490-5495 ◽  
Author(s):  
J. Chen ◽  
T. Sekiguchi ◽  
D. Yang ◽  
F. Yin ◽  
K. Kido ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Electron Beam Induced Current

Temperature-dependent recombination velocity analysis on artificial small angle grain boundaries using electron beam induced current method

2016 ◽  
Vol 119 (6) ◽  
pp. 065302 ◽  
Author(s):  
Takuto Kojima ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Ronit R. Prakash ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Small Angle ◽  
Current Method ◽  
Velocity Analysis ◽  
Induced Current ◽  
Temperature Dependent ◽  
Electron Beam Induced Current ◽  
Recombination Velocity
Sign in / Sign up

Export Citation Format

Share Document