Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

2016 ◽  
Vol 119 (1) ◽  
pp. 015303 ◽  
Author(s):  
X. Liu ◽  
C. M. Jackson ◽  
F. Wu ◽  
B. Mazumder ◽  
R. Yeluri ◽  
...  
1992 ◽  
Vol 72 (7) ◽  
pp. 3029-3033 ◽  
Author(s):  
Yasuhide Kuroda ◽  
Ikuo Suemune ◽  
Masahiro Fujimoto ◽  
Yoshihisa Fujii ◽  
Nobuo Otsuka ◽  
...  

1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.


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