scholarly journals The chromium doping of Ni3Fe alloy and restructuring of grain boundary ensemble at the phase transition A1→L12

2016 ◽  
Author(s):  
Olga Perevalova ◽  
Elena Konovalova ◽  
Nina Koneva ◽  
Eduard Kozlov
Keyword(s):  
Phase Transition ◽  
Grain Boundary ◽  
Chromium Doping ◽  
Ni3fe Alloy

Change in grain-boundary ensemble upon the A1 → L12 phase transition in Ni3Mn alloy

2012 ◽  
Vol 76 (7) ◽  
pp. 836-839 ◽  
Author(s):  
E. V. Konovalova ◽  
O. B. Perevalova ◽  
N. A. Koneva ◽  
K. V. Ivanov ◽  
E. V. Kozlov
Keyword(s):  
Phase Transition ◽  
Grain Boundary

A grain boundary phase transition in Si–Au

2012 ◽  
Vol 66 (5) ◽  
pp. 203-206 ◽  
Author(s):  
Shuailei Ma ◽  
Kaveh Meshinchi Asl ◽  
Chookiat Tansarawiput ◽  
Patrick R. Cantwell ◽  
Minghao Qi ◽  
...  
Keyword(s):  
Phase Transition ◽  
Grain Boundary ◽  
Boundary Phase

Grain Boundary Wetting Phase Transition in the Mo-Ni System

1997 ◽  
Vol 143-147 ◽  
pp. 1517-1522 ◽  
Author(s):  
Boris B. Straumal ◽  
V. Semenov ◽  
V. Glebovsky ◽  
W. Gust
Keyword(s):  
Phase Transition ◽  
Grain Boundary ◽  
Grain Boundary Wetting

Grain boundary segregation and secondary-phase transition of (La,Nb)-codoped TiO2 ceramic

2016 ◽  
Vol 42 (10) ◽  
pp. 11584-11592 ◽  
Author(s):  
Ji-Kang Yan ◽  
Kun-Yong Kang ◽  
Jing-Hong Du ◽  
Guo-You Gan ◽  
Jian-Hong Yi
Keyword(s):  
Phase Transition ◽  
Grain Boundary ◽  
Boundary Segregation ◽  
Secondary Phase ◽  
Grain Boundary Segregation ◽  
Codoped Tio2 ◽  
Tio2 Ceramic

scholarly journals Electrical conduction properties of the BZT–BST ceramics

2020 ◽  
Vol 10 (06) ◽  
pp. 2050026
Author(s):  
Satyanarayan Patel ◽  
Harekrishna Yadav
Keyword(s):  
Phase Transition ◽  
Energy Harvesting ◽  
Grain Boundary ◽  
Negative Temperature ◽  
Relaxation Mechanism ◽  
Point Of View ◽  
Relaxation Processes ◽  
Potential Applications ◽  
Bst Ceramics ◽  
Grain Bulk

0.5Ba([Formula: see text][Formula: see text]O3-0.5([Formula: see text][Formula: see text]TiO3 (BZT–BST) has been explored in recent times for potential applications in energy harvesting, electrocaloric and energy storage. To this end, energy harvesting/conversion and storage applications require an understanding of the conduction and loss mechanisms. The conduction mechanism in BZT–BST ceramics is studied using impedance spectroscopy (IS) at 0.1 Hz−3 MHz and 100−600[Formula: see text]C. Impedance study reveals the presence of two types of relaxation processes due to grain and grain boundary contributions. The relaxation time and dc conductivity activation energies are obtained as 1.12/1.3 eV and 1.05/1.2eV for bulk/grain boundary, respectively, and found that oxygen vacancies dominated electrical behavior. The relaxation mechanism follows non-Debye-type behavior. The high resistance of the grain (bulk) in the ferroelectric region does not contribute to the high losses; the losses probably result from the phase transition. Also, BZT–BST ceramics exhibit a negative temperature coefficient of resistance (NTCR) behaviour. From a practical application point of view in the temperature regime of 25–65[Formula: see text]C, the loss’s contribution is low. The significant contributions of loss result from the response of phase-transition in this temperature range (25–65[Formula: see text]C).

The Grain Boundary Wetting in the Sn– 25 at% In Alloys

2006 ◽  
Vol 258-260 ◽  
pp. 491-496 ◽  
Author(s):  
C.H. Yeh ◽  
L.S. Chang ◽  
Boris B. Straumal
Keyword(s):  
Phase Transition ◽  
Phase Diagram ◽  
Grain Boundary ◽  
Annealing Temperature ◽  
Bulk Phase ◽  
Bulk Phase Diagram ◽  
Tie Lines ◽  
Grain Boundary Wetting ◽  
Increasing Temperature

The grain boundary (GB) wetting was investigated in the Sn – 25 at.% In alloy. It was found that the portion of GBs wetted by the melt depends on the annealing temperature. No GB completely wetted by melt was observed at 140°C, while all GBs were fully wetted after annealing at 180°C. Between 140°C and 180°C the portion of wetted GBs increases with increasing temperature. The tie-lines of GB wetting phase transition were constructed in the Sn–In bulk phase diagram.

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