Si quantum dots in silicon nitride: Quantum confinement and defects

2015 ◽  
Vol 118 (22) ◽  
pp. 224302 ◽  
Author(s):  
L. V. Goncharova ◽  
P. H. Nguyen ◽  
V. L. Karner ◽  
R. D'Ortenzio ◽  
S. Chaudhary ◽  
...  
2019 ◽  
Vol 123 (45) ◽  
pp. 27854-27861
Author(s):  
Valentin V. Nikolaev ◽  
Mikhail A. Kaliteevski ◽  
Nikita S. Averkiev

2016 ◽  
Vol 120 (14) ◽  
pp. 145305 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
R. Serna ◽  
F. Cabello ◽  
E. Haro-Poniatowski ◽  
...  

2001 ◽  
Vol 86 (7) ◽  
pp. 1355-1357 ◽  
Author(s):  
Nae-Man Park ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park

2015 ◽  
Vol 821-823 ◽  
pp. 1003-1006
Author(s):  
Roy Dagher ◽  
Rami Khazaka ◽  
Stephane Vézian ◽  
Monique Teissiere ◽  
Adrien Michon ◽  
...  

Structural investigations of Si quantum dots (QDs) grown by CVD on two different heterostructures: AlN/Si (111) and 3C-SiC/Si (100) are conducted. The Si QDs have been grown using silane as precursor, diluted in hydrogen, at fixed temperature and pressure (830°C - 800mbar). High densities of dots can be obtained (up to 1011 cm-2) with typical heights below 10nm. The kinetic of deposition lets suppose the presence of an initial wetting layer before the dots formation. Different durations are required for nucleating dots on AlN and 3C-SiC. Si QDs on AlN present a luminescence band which can be attributed to quantum confinement.


2007 ◽  
Vol 2007 ◽  
pp. 1-11 ◽  
Author(s):  
Eun-Chel Cho ◽  
Martin A. Green ◽  
Gavin Conibeer ◽  
Dengyuan Song ◽  
Young-Hyun Cho ◽  
...  

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.


2020 ◽  
Vol 8 (31) ◽  
pp. 15789-15794
Author(s):  
Hiroshi Sugimoto ◽  
Hao Zhou ◽  
Miho Takada ◽  
Junichiro Fushimi ◽  
Minoru Fujii

Photocatalytic H2 generation by B,P-codoped Si quantum dots (QDs) with diameters in the quantum confinement regime is investigated. The H2 generation rate is enhanced by the increase of reduction ability of Si QDs owing to the quantum size effect.


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