Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics

2015 ◽  
Vol 118 (20) ◽  
pp. 204106 ◽  
Author(s):  
J. W. McPherson
Keyword(s):  
Electric Fields ◽  
Semiconductor Devices ◽  
Lorentz Factor ◽  
Thin Dielectrics

Doping and Charging in Colloidal Semiconductor Nanocrystals

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 1005-1008 ◽  
Author(s):  
Moonsub Shim ◽  
Congjun Wang ◽  
David J. Norris ◽  
Philippe Guyot-Sionnest
Keyword(s):  
Electrical Properties ◽  
Crystal Lattice ◽  
Electric Fields ◽  
Semiconductor Devices ◽  
Semiconductor Nanocrystals ◽  
Semiconductor Technology ◽  
Semiconductor Crystal ◽  
Impurity Atoms ◽  
Colloidal Semiconductor Nanocrystals ◽  
Colloidal Semiconductor

Modern semiconductor technology has been enabled by the ability to control the number of carriers (electrons and holes) that are available in the semiconductor crystal. This control has been achieved primarily with two methods: doping, which entails the introduction of impurity atoms that contribute additional carriers into the crystal lattice; and charging, which involves the use of applied electric fields to manipulate carrier densities near an interface or junction. By controlling the carriers with these methods, the electrical properties of the semiconductor can be precisely tailored for a particular application. Accordingly, doping and charging play a major role in most modern semiconductor devices.

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 1007-1010 ◽  
Author(s):  
Christophe Raynaud ◽  
Daniel Loup ◽  
Phillippe Godignon ◽  
Raul Perez Rodriguez ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Semiconductor Devices ◽  
Optical Beam ◽  
Induced Current ◽  
Bipolar Diodes ◽  
High Electric Fields ◽  
Optical Beam Induced Current

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

The Case For 0.1eV EELS in a 1Å STEM

2000 ◽  
Vol 6 (S2) ◽  
pp. 108-109
Author(s):  
R.E. Batson
Keyword(s):  
Electric Fields ◽  
Single Molecule ◽  
Semiconductor Devices ◽  
Good Reason ◽  
Atomic Level ◽  
Transistor Channel ◽  
Physical Limit ◽  
Local Electronic Structure ◽  
Channel Lengths ◽  
Very High

Semiconductor devices are rapidly heading towards nanometer sizes, with dielectric gate oxides already in the 2-3nm thickness range and transistor channel lengths of order 10-20nm. There is good reason to believe, therefore, that physical limits imposed by atomic level granularity will dominate operation of semiconductor devices in the future. Thus, recent work has identified a physical limit for the thickness of SiO2 in order to maintain its insulating character. [1] On the other hand, new opportunities are created, based on new behavior at the atomic level. In the presence of very high local electric fields, for instance, the local electronic structure can change from insulating to conductive, forming a very small, very fast “Mott” transistor. [2] In a single molecule having a localized electronic level which is positioned well with respect to a conducting environment, single electron transistor operation may be possible at room temperature. [3]

scholarly journals Modification of relativistic beam fields under the influence of external conducting and ferromagnetic flat boundaries

2020 ◽  
Vol 2020 (1) ◽  
Author(s):  
B B Levchenko
Keyword(s):  
Electric Fields ◽  
Particle Density ◽  
Lorentz Factor ◽  
Historical Background ◽  
External Fields ◽  
Relativistic Limit ◽  
Elliptical Cross ◽  
Flat Surfaces ◽  
Exact Summation ◽  
Analytical Expressions

Abstract We derive analytical expressions for external fields of a relativistic bunch of charged particles with a circular and an elliptical cross section under different boundary conditions and interaction of the fields with an accelerator structural elements. The particle density in the bunch is assumed to be uniform as well as non-uniform. At distances far apart from the bunch, in free space the field reduces to the relativistic modified Coulomb form for a pointlike charge and at small distances the expressions reproduce the external fields of a continuous beam. In an ultra-relativistic limit the longitudinal components of the internal and external electric fields of the bunch are strongly suppressed by the Lorentz factor. If the bunch is surrounded by conducting surfaces, the bunch self-fields are modified. Image fields generated by a bunch between two parallel conducting plates are studied in detail. Exact summation of the electric, $E_y$, and magnetic, $B_x$, image field components allows the infinite series to be represented in terms of elementary trigonometric functions. The new expressions for modified fields are applied to study image forces acting on the bunch constituents and the bunch as a whole. The coherent and incoherent tune shifts for an arbitrary bunch displacement from the midplane are calculated in the framework of an improved linear theory, for both infinite and finite parallel flat surfaces. Moreover, the developed method allows us to generalize the Laslett image coefficients $\epsilon_1$, $\epsilon_2$, $\xi_1$, $\xi_2$ to the case of an arbitrary bunch offset and reveal relationships between these coefficients. Appendix C provides a brief historical background of the development of the method of electrical images.

scholarly journals Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations

2020 ◽  
Vol 85 (1) ◽  
Author(s):  
Tobias Linn ◽  
Kai Bittner ◽  
Hans Georg Brachtendorf ◽  
Christoph Jungemann
Keyword(s):  
Conservation Laws ◽  
Electric Fields ◽  
Transport Model ◽  
Hyperbolic Systems ◽  
Semiconductor Devices ◽  
High Mobility ◽  
Parabolic Systems ◽  
Plasma Waves ◽  
Source Terms ◽  
Systems Of Pdes

Abstract Instabilities of electron plasma waves in high-mobility semiconductor devices have recently attracted a lot of attention as a possible candidate for closing the THz gap. Conventional moments-based transport models usually neglect time derivatives in the constitutive equations for vectorial quantities, resulting in parabolic systems of partial differential equations (PDE). To describe plasma waves however, such time derivatives need to be included, resulting in hyperbolic rather than parabolic systems of PDEs; thus the fundamental nature of these equation systems is changed completely. Additional nonlinear terms render the existing numerical stabilization methods for semiconductor simulation practically useless. On the other hand there are plenty of numerical methods for hyperbolic systems of PDEs in the form of conservation laws. Standard numerical schemes for conservation laws, however, are often either incapable of correctly handling the large source terms present in semiconductor devices due to built-in electric fields, or rely heavily on variable transformations which are specific to the equation system at hand (e.g. the shallow water equations), and can not be generalized easily to different equations. In this paper we develop a novel well-balanced numerical scheme for hyperbolic systems of PDEs with source terms and apply it to a simple yet non-linear electron transport model.

Electron holography of electrostatic fields

1993 ◽  
Vol 51 ◽  
pp. 1094-1095
Author(s):  
D. C. Joy ◽  
X. Zhang ◽  
A. Mohan ◽  
B. Cunningham
Keyword(s):  
Magnetic Fields ◽  
Electric Fields ◽  
Semiconductor Devices ◽  
Active Regions ◽  
Ferroelectric Materials ◽  
Electron Holography ◽  
Electron Wave ◽  
Holographic Imaging ◽  
Electrostatic Fields

Electron Holography allows both the amplitude and phase of a transmitted wavefront to be stored and subsequently recovered by a reconstruction of the hologram. Since both magnetic and electric fields change the phase of an electron wave that passes through them electron holography can therefore be used to directly, and quantitatively, image such fields. Significant experimental applications have already been made of this technique to the study of magnetic fields and materials, and electric fields have been studied in ferroelectric materials. Such a technique has particular value when applied to the study of semiconductor devices since these rely for their operation on the electric fields produced internally at P-N junctions or Shottky barriers. Holographic imaging of these fields will make it possible to accurately find the active regions of junctions as well as making it possible to measure the electrostatic fields that are present. Consider a cross-sectioned P-N junction of thickness t placed normal to the beam (figure 1).

Near IR Continuous Wavelength Spectroscopy of Photon Emissions from Semiconductor Devices

2003 ◽  
Author(s):  
W.B. Len ◽  
Y.Y. Liu ◽  
J.C.H. Phang ◽  
D.S.H. Chan
Keyword(s):  
High Resolution ◽  
Electric Fields ◽  
Wavelength Range ◽  
Semiconductor Devices ◽  
Energy Levels ◽  
Photon Emission ◽  
Experimental Results ◽  
High Resolution Spectroscopy ◽  
Near Ir ◽  
Emission Activity

Abstract A spectroscopic photon emission microscope (SPEM) which is capable of high resolution spectroscopy for a continuous wavelength range between 300 nm to 1700 nm has been developed. Photon emissions were observed at energy levels below silicon bandgap from pn junctions and MOSFET devices at different biases. The experimental results indicate significant emission activity in this range. It was also found that the spectra is closely correlated to the electric fields present in the devices.

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