Modeling of the non-equilibrium effects by high electric fields in small semiconductor devices

2011 ◽  
Vol 390 (20) ◽  
pp. 3329-3336 ◽  
Author(s):  
A. Rossani
Keyword(s):  
Electric Fields ◽  
Semiconductor Devices ◽  
High Electric Fields ◽  
Non Equilibrium

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 1007-1010 ◽  
Author(s):  
Christophe Raynaud ◽  
Daniel Loup ◽  
Phillippe Godignon ◽  
Raul Perez Rodriguez ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Semiconductor Devices ◽  
Optical Beam ◽  
Induced Current ◽  
Bipolar Diodes ◽  
High Electric Fields ◽  
Optical Beam Induced Current

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

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