scholarly journals The strain induced band gap modulation from narrow gap semiconductor to half-metal on Ti2CrGe: A first principles study

AIP Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 117225 ◽  
Author(s):  
Jia Li ◽  
Zhidong Zhang ◽  
Zunming Lu ◽  
Hongxian Xie ◽  
Wei Fang ◽  
...  
2013 ◽  
Vol 46 (23) ◽  
pp. 235101 ◽  
Author(s):  
Nuo Liu ◽  
Zheqi Zheng ◽  
Yongxin Yao ◽  
Guiping Zhang ◽  
Ning Lu ◽  
...  

2018 ◽  
Author(s):  
Mihir Ranjan Sahoo ◽  
Sivabrata Sahu ◽  
Anoop Kumar Kushwaha ◽  
S. K. Nayak

2020 ◽  
Vol 137 ◽  
pp. 106320 ◽  
Author(s):  
D.M. Hoat ◽  
Mosayeb Naseri ◽  
Nguyen N. Hieu ◽  
R. Ponce-Pérez ◽  
J.F. Rivas-Silva ◽  
...  

2014 ◽  
Vol 16 (44) ◽  
pp. 24466-24472 ◽  
Author(s):  
Pin Xiao ◽  
Xiao-Li Fan ◽  
Li-Min Liu ◽  
Woon-Ming Lau

The band gap increases with increasing tensile strain to its maximum value at 6% strain and then decreases.


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