Band gap engineering of FeS2 under biaxial strain: a first principles study

2014 ◽  
Vol 16 (44) ◽  
pp. 24466-24472 ◽  
Author(s):  
Pin Xiao ◽  
Xiao-Li Fan ◽  
Li-Min Liu ◽  
Woon-Ming Lau

The band gap increases with increasing tensile strain to its maximum value at 6% strain and then decreases.

RSC Advances ◽  
2016 ◽  
Vol 6 (98) ◽  
pp. 95846-95854 ◽  
Author(s):  
Wencheng Tang ◽  
Minglei Sun ◽  
Qingqiang Ren ◽  
Yajun Zhang ◽  
Sake Wang ◽  
...  

Using first principles calculations, we predicted that a direct-band-gap between 0.98 and 2.13 eV can be obtained in silicene by symmetrically and asymmetrically (Janus) functionalisation with halogen atoms and applying elastic tensile strain.


2015 ◽  
Vol 629 ◽  
pp. 43-48 ◽  
Author(s):  
Pin Xiao ◽  
Xiao-Li Fan ◽  
Han Zhang ◽  
Xiaoliang Fang ◽  
Li-Min Liu

2020 ◽  
Vol 253 ◽  
pp. 123308 ◽  
Author(s):  
Mukhtar Lawan Adam ◽  
Oyawale Adetunji Moses ◽  
Zia ur Rehman ◽  
Zhanfeng Liu ◽  
Li Song ◽  
...  

2011 ◽  
Vol 84 (24) ◽  
Author(s):  
Tingting Qi ◽  
Matthew T. Curnan ◽  
Seungchul Kim ◽  
Joseph W. Bennett ◽  
Ilya Grinberg ◽  
...  

2011 ◽  
Vol 98 (2) ◽  
pp. 023105 ◽  
Author(s):  
Aihua Zhang ◽  
Hao Fatt Teoh ◽  
Zhenxiang Dai ◽  
Yuan Ping Feng ◽  
Chun Zhang

2015 ◽  
Vol 106 (5) ◽  
pp. 053113 ◽  
Author(s):  
Gui Gui ◽  
Dane Morgan ◽  
John Booske ◽  
Jianxin Zhong ◽  
Zhenqiang Ma

2020 ◽  
Vol 22 (36) ◽  
pp. 20914-20921 ◽  
Author(s):  
Rajmohan Muthaiah ◽  
Jivtesh Garg

We report novel pathways to significantly enhance the thermal conductivity at nanometer length scales in boron phosphide through biaxial strain.


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