THz photomixers based on nitrogen-ion-implanted GaAs

2015 ◽  
Vol 118 (18) ◽  
pp. 183102 ◽  
Author(s):  
E. Peytavit ◽  
M. Billet ◽  
Y. Desmet ◽  
G. Ducournau ◽  
D. Yarekha ◽  
...  
Keyword(s):  
Nitrogen Ion ◽  
Ion Implanted

Characteristics of surface nano-structural modifications in nitrogen ion implanted W as a function of temperature

2006 ◽  
Vol 252 (15) ◽  
pp. 5419-5423 ◽  
Author(s):  
H. Savaloni ◽  
F. Modiri ◽  
H. Hajihosseini ◽  
A. Shokouhy
Keyword(s):  
Structural Modifications ◽  
Nitrogen Ion ◽  
Ion Implanted

Quantitative Ruthenium Method for Analysis of Nitrogen Ion-Implanted Titanium Alloy (Ti-6AI-4V) and the Effect on Bacterial Adherence

1991 ◽  
Vol 252 ◽  
Author(s):  
Beverly L. Giammara ◽  
James M. Williams ◽  
David J. Birch ◽  
Joanne J. Dobbins
Keyword(s):  
Pseudomonas Aeruginosa ◽  
Titanium Alloy ◽  
Ion Implantation ◽  
Growth Period ◽  
Scattered Electron ◽  
Nitrogen Ion Implantation ◽  
Total Fluence ◽  
Nitrogen Ion ◽  
Electron Imaging ◽  
Ion Implanted

ABSTRACTThe effects of nitrogen ion implantation of Ti-6AI-4V alloy on growth of Pseudomonas aeruginosa bacteria on surfaces of the alloy have been investigated. Results for ion implanted samples were compared with controls with similarly smoothly polished surfaces and with controls that had intentionally roughened surfaces. The test consisted of exposing sterile alloy samples to a microbiological broth, to which 24 hour-old cultures of Pseudomonas aeruginosa had been added. After bioassociation at normal temperature 37°C, bacteria adhering to the surface were fixed and treated with a new ruthenium tetroxide staining method, and quantified by use of scanning electron microscopy (SEM), back-scattered electron imaging and EDAX energy dispersive microanalysis. For smooth samples of the alloy, after a 12 hour growth period, the retained bacteria (revealed by the biologically incorporated ruthenium), decreased monotonically with nitrogen dose out to a total fluence of approximately 7 × 1017/cm2 in an affected depth of approximately 0.1500 μm. The SEM confirmed that the Pseudomonas aeruginosa adhered equally to control materials. The ruthenium studies revealed that the amount of bacterial adhesion is indirectly proportional to the nitrogen ion implantation of the titanium. The greater the percentage of nitrogen ion implantation in the titanium alloy, the less bacteria colonized the disk.

Ultra-Microhardness Tests on Ion Implanted Metal Surfaces

1981 ◽  
Vol 7 ◽  
Author(s):  
J.B. Pethica ◽  
W.C. Oliver
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Metal Surfaces ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
High Doses ◽  
Penetration Depths ◽  
Ion Implanted

ABSTRACTTo measure the mechanical properties of ion implanted layers special microhardness tests with penetration depths less than 100 nm have been made. The results show that increases in hardness of up to 50 % may occur in a number of metals as a result of nitrogen ion implantation. Considerable carbon is also present in the implanted surfaces and when in the form of a distinct layer, may give an apparent softening of surfaces at high doses.

scholarly journals Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

Coatings ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 160-178 ◽  
Author(s):  
Youssef S. Al Jabbari ◽  
Jennifer Fehrman ◽  
Ashley C. Barnes ◽  
Angela M. Zapf ◽  
Spiros Zinelis ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Dental Materials ◽  
Nitrogen Ion ◽  
Ion Implanted

Statistical and fractal analysis of nitrogen ion implanted tantalum thin films

2020 ◽  
Vol 126 (6) ◽  
Author(s):  
A. H. Ramezani ◽  
S. Hoseinzadeh ◽  
Zh. Ebrahiminejad
Keyword(s):  
Thin Films ◽  
Fractal Analysis ◽  
Nitrogen Ion ◽  
Ion Implanted

Evolution of multiple dielectric responses and relaxor-like behaviors in pure and nitrogen-ion-implanted (Ba, Sr)TiO3 thin films

2014 ◽  
Vol 104 (12) ◽  
pp. 122902 ◽  
Author(s):  
Y. H. Gao ◽  
J. Yang ◽  
H. Shen ◽  
J. L. Sun ◽  
X. J. Meng ◽  
...  
Keyword(s):  
Thin Films ◽  
Nitrogen Ion ◽  
Ion Implanted

Tribological Behavior of Ion Implanted AISI 440C Stainless Steel under Oil Lubricated Condition

2013 ◽  
Vol 419 ◽  
pp. 334-340 ◽  
Author(s):  
Feng Bin Liu ◽  
Hui Ping Li ◽  
Yan Cui ◽  
Jie Jian Di ◽  
Min Qu ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Tribological Behavior ◽  
Three Dimensional ◽  
Sample Surface ◽  
Surface Structures ◽  
Low Friction ◽  
Effect Mechanism ◽  
Nitrogen Ion ◽  
N Compounds ◽  
Ion Implanted

The tribological behaviors of nitrogen and titanium ion implanted AISI 440C stainless steel were studied by using an oscillating ball-on-disk tribometer under oil lubricated condition. The results showed that the ion implantations would significantly decrease the friction coefficient of the samples. To interpret the effect mechanism of the ion implantation on tribological performance, the surface morphology and oil wettability of the ion implanted samples were investigated by using a three-dimensional white interferometer and a contact angle analyzer, respectively. In addition, the surface structures and components of the samples were analyzed by using XRD and XPS techniques. The results indicated that the low friction coefficients of the ion implanted samples can be attributed to the new phases formed on the sample surfaces. For nitrogen ion implanted sample, the metal nitrides, supersaturated interstitial N and some C-O-N compounds appear on the sample surface. For titanium ion implanted sample, apart from TiO2and TiC phases form at the AISI 440C steel surface. Those components increase the surface energy of the AISI 440C steel and are in favor of the formation of the thin oil film.

Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs

2013 ◽  
Vol 103 (17) ◽  
pp. 171905
Author(s):  
J. S. Kim ◽  
H. C. Ryu ◽  
S. H. Kim ◽  
H. Kim ◽  
H. Rho ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Lattice Defects ◽  
Transverse Optical ◽  
Phonon Generation ◽  
Nitrogen Ion ◽  
Ion Implanted

$\beta$-Ga2O3 MOSFETs with Nitrogen-Ion-Implanted Back-Barrier: DC Performance and Trapping Effects

2019 ◽  
Author(s):  
Man Hoi Wong ◽  
Ken Goto ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Masataka Higashiwaki
Keyword(s):  
Nitrogen Ion ◽  
Trapping Effects ◽  
Ion Implanted
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