scholarly journals Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

2015 ◽  
Vol 118 (15) ◽  
pp. 155301 ◽  
Author(s):  
C. Bazioti ◽  
E. Papadomanolaki ◽  
Th. Kehagias ◽  
T. Walther ◽  
J. Smalc-Koziorowska ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Indium Content ◽  
High Indium Content ◽  
Compositional Grading

scholarly journals High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 454 ◽  
pp. 164-172 ◽  
Author(s):  
Erin C.H. Kyle ◽  
Stephen W. Kaun ◽  
Feng Wu ◽  
Bastien Bonef ◽  
James S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Indium Content ◽  
High Indium Content

1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

2006 ◽  
Vol 3 (3) ◽  
pp. 631-634
Author(s):  
Zhichuan Niu ◽  
Shiyong Zhang ◽  
Haiqiao Ni ◽  
Donghai Wu ◽  
Zhenhong He ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Indium Content ◽  
High Indium Content

scholarly journals Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 308 ◽  
Author(s):  
ChengDa Tsai ◽  
Ikai Lo ◽  
YingChieh Wang ◽  
ChenChi Yang ◽  
HongYi Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Indium Content ◽  
High Indium Content

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 182-184 ◽  
pp. 255-258
Author(s):  
H. Heinke ◽  
Franz Dieter Fischer ◽  
A. Waag ◽  
T. Litz ◽  
M. Korn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

1999 ◽  
Vol 74 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Hanxuan Li ◽  
Theda Daniels-Race ◽  
Zhanguo Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Growth Mode

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

2011 ◽  
Vol 110 (3) ◽  
pp. 033501 ◽  
Author(s):  
Y. Kotsar ◽  
B. Doisneau ◽  
E. Bellet-Amalric ◽  
A. Das ◽  
E. Sarigiannidou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation
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