1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

2006 ◽  
Vol 3 (3) ◽  
pp. 631-634
Author(s):  
Zhichuan Niu ◽  
Shiyong Zhang ◽  
Haiqiao Ni ◽  
Donghai Wu ◽  
Zhenhong He ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Indium Content ◽  
High Indium Content

scholarly journals Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 308 ◽  
Author(s):  
ChengDa Tsai ◽  
Ikai Lo ◽  
YingChieh Wang ◽  
ChenChi Yang ◽  
HongYi Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Indium Content ◽  
High Indium Content

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

scholarly journals Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

2015 ◽  
Vol 118 (15) ◽  
pp. 155301 ◽  
Author(s):  
C. Bazioti ◽  
E. Papadomanolaki ◽  
Th. Kehagias ◽  
T. Walther ◽  
J. Smalc-Koziorowska ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Indium Content ◽  
High Indium Content ◽  
Compositional Grading

scholarly journals High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 454 ◽  
pp. 164-172 ◽  
Author(s):  
Erin C.H. Kyle ◽  
Stephen W. Kaun ◽  
Feng Wu ◽  
Bastien Bonef ◽  
James S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Indium Content ◽  
High Indium Content

scholarly journals Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 263-268
Author(s):  
S. Einfeldt ◽  
T. Böttcher ◽  
D. Hommel ◽  
H. Selke ◽  
P. L. Ryder ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Indium Content ◽  
Atomic Scale ◽  
Local Composition ◽  
Transmission Electron ◽  
Cathodoluminescence Spectroscopy ◽  
Short Period ◽  
Compositional Homogeneity

InGaN layers grown by molecular beam epitaxy are investigated in terms of their compositional homogeneity using transmission electron microscopy and cathodoluminescence spectroscopy performed with high spatial resolution. Strong fluctuations of the indium content were found in bulklike layers, which could be partially reduced by modulating the indium flux during growth, i. e. by nominally growing a short period GaN/InGaN superlattice. For indium compositions above x ≅ 0.1 this approach fails. Strained InGaN in quantum wells exhibits lateral fluctuations on an atomic scale and on a scale of several hundred nanometers. The results are discussed in view of the origin of inhomogeneous indium incorporation.

Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
S. Einfeldt ◽  
T. Böttcher ◽  
D. Hommel ◽  
H. Selke ◽  
P. L. Ryder ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Indium Content ◽  
Atomic Scale ◽  
Local Composition ◽  
Transmission Electron ◽  
Cathodoluminescence Spectroscopy ◽  
Short Period ◽  
Compositional Homogeneity

AbstractInGaN layers grown by molecular beam epitaxy are investigated in terms of their compositional homogeneity using transmission electron microscopy and cathodoluminescence spectroscopy performed with high spatial resolution. Strong fluctuations of the indium content were found in bulk-like layers, which could be partially reduced by modulating the indium flux during growth, i. e. by nominally growing a short period GaN/InGaN superlattice. For indium compositions above x ≠ 0.1 this approach fails. Strained InGaN in quantum wells exhibits lateral fluctuations on an atomic scale and on a scale of several hundred nanometers. The results are discussed in view of the origin of inhomogeneous indium incorporation.

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