In-situ characterization of the optical and electronic properties in GeTe and GaSb thin films

2015 ◽  
Vol 118 (13) ◽  
pp. 135712 ◽  
Author(s):  
A. Velea ◽  
G. Socol ◽  
M. Popescu ◽  
A. C. Galca
2004 ◽  
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pp. 8173-8181 ◽  
Author(s):  
Raül Díaz ◽  
Suzanne Joiret ◽  
Ángel Cuesta ◽  
Ismael Díez-Pérez ◽  
Philippe Allongue ◽  
...  

1992 ◽  
Vol 10 (4) ◽  
pp. 939-944 ◽  
Author(s):  
Dubravko I. Babić ◽  
Thomas E. Reynolds ◽  
Evelyn L. Hu ◽  
John E. Bowers

2008 ◽  
Vol 93 (15) ◽  
pp. 151904 ◽  
Author(s):  
Tim T. Fister ◽  
Dillon D. Fong ◽  
Jeffrey A. Eastman ◽  
Peter M. Baldo ◽  
Matthew J. Highland ◽  
...  

1988 ◽  
Vol 24 (2) ◽  
pp. 1731-1733 ◽  
Author(s):  
D. Weller ◽  
P. Schrijner ◽  
W. Reim

2010 ◽  
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Author(s):  
Thomas Genevès ◽  
Luc Imhoff ◽  
Bruno Domenichini ◽  
Paul Maurice Peterlé ◽  
Sylvie Bourgeois

Author(s):  
F. Hosseini Teherani ◽  
E. Caristan ◽  
F. Carrié ◽  
T. Pech ◽  
J. Baixeras ◽  
...  

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4445-4448 ◽  
Author(s):  
KOHEI ONOZUKA ◽  
NOBUYUKI IWATA ◽  
HIROSHI YAMAMOTO

We constructed a novel vacuum system in which the cathode luminescence properties of as-prepared films can be measured in-situ. It has been observed that the Zn-Ga-O films deposited on 500°C ITO by sputtering emits light with wavelength of about 500 nm from an ultra thin Zn-rich layer formed near film surface. The luminescence induced by irradiation of electrons has also been observed for the first time in the organic bilayered TPD/Alq 3 films prepared in thermal evaporation. Its wavelength blue-shifts by about 120 nm in comparison with the electroluminescence of the same materials. The developed vacuum system is useful to characterize various thin films.


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