scholarly journals Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097154 ◽  
Author(s):  
YongHe Chen ◽  
XiaoHua Ma ◽  
WeiWei Chen ◽  
Bin Hou ◽  
JinCheng Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reverse Leakage Current ◽  
Gan Hemts ◽  
Gate Edge

Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs

2022 ◽  
Vol 137 ◽  
pp. 106222
Author(s):  
Jayjit Mukherjee ◽  
Rupesh K. Chaubey ◽  
D.S. Rawal ◽  
R.S. Dhaka
Keyword(s):  
Leakage Current ◽  
Stress Recovery ◽  
Reverse Leakage Current ◽  
Gan Hemts ◽  
Post Stress

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

2009 ◽  
Vol 615-617 ◽  
pp. 971-974 ◽  
Author(s):  
Young Hwan Choi ◽  
Ji Yong Lim ◽  
Kyu Heon Cho ◽  
Young Shil Kim ◽  
Min Koo Han
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Depletion Region ◽  
Wet Etching ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Field Plate ◽  
Gan Hemts ◽  
Gate Edge

AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any sacrifice of the forward electrical characteristics were proposed and fabricated. The tapered structure was fabricated by the wet etching process. The depletion region of the proposed structure expands toward the slope of the tapered field plate and the electric field concentration at the gate edge can be successfully suppressed. The gate leakage current of proposed device at VGS= -5 V and VDS= 100 V was decreased by 2-3 orders compared with that of the conventional one. The breakdown voltage of proposed device was 880 V while that of conventional one was 548 V.

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

2021 ◽  
Vol 118 (12) ◽  
pp. 122102
Author(s):  
Qinglong Yan ◽  
Hehe Gong ◽  
Jincheng Zhang ◽  
Jiandong Ye ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Current Modulation ◽  
Reverse Leakage Current

scholarly journals Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

2021 ◽  
Vol 118 (7) ◽  
pp. 072103
Author(s):  
T. Liu ◽  
H. Watanabe ◽  
S. Nitta ◽  
J. Wang ◽  
G. Yu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gan Hemts ◽  
Mg Doped

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

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