scholarly journals Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097152 ◽  
Author(s):  
Keiko Kato ◽  
Katsuya Oguri ◽  
Haruki Sanada ◽  
Takehiko Tawara ◽  
Tetsuomi Sogawa ◽  
...  
Keyword(s):  
Decay Rate ◽  
Fano Resonance ◽  
Type Silicon ◽  
Coherent Phonons ◽  
P Type

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
R. Rizk ◽  
P. De Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
D. Mathiot
Keyword(s):  
Hydrogen Diffusion ◽  
New Approach ◽  
Kinetic And Thermodynamic Parameters ◽  
Dissociation Energies ◽  
Molecule Formation ◽  
Type Silicon ◽  
P Type ◽  
Phosphorus Doped ◽  
Diffusion Profiles

ABSTRACTDeuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm−3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model. The new approach which excludes the H2 molecule formation, as applied recently to ptype silicon, allows the determination of kinetic and thermodynamic parameters such as diffusion coefficients, activation and dissociation energies. These parameters 6re compared with those found for p-type silicon and discussed in the light ofavailable data for n-type material.

Determination of the electrical level of vacancy in electron irradiated p-type silicon

1982 ◽  
Vol 91 (7) ◽  
pp. 358-360 ◽  
Author(s):  
B.N. Mukashev ◽  
V.V. Frolov ◽  
L.G. Kolodin
Keyword(s):  
Type Silicon ◽  
P Type
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