Direct observation of conductive filament formation in Alq3 based organic resistive memories

2015 ◽  
Vol 118 (7) ◽  
pp. 075501 ◽  
Author(s):  
Y. Busby ◽  
S. Nau ◽  
S. Sax ◽  
E. J. W. List-Kratochvil ◽  
J. Novak ◽  
...  
Keyword(s):  
Direct Observation ◽  
Filament Formation ◽  
Conductive Filament

Conductive Filament Formation in Printed Circuit Boards – Effects of Reflow Conditions and Flame Retardants

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Michael Pecht
Keyword(s):  
Flame Retardants ◽  
Printed Circuit Boards ◽  
Electrochemical Process ◽  
Lead Free ◽  
Circuit Boards ◽  
Filament Formation ◽  
Conductive Filament ◽  
Printed Circuit ◽  
Free Solder ◽  
Halogen Free

Abstract Failures in printed circuit boards account for a significant percentage of field returns in electronic products and systems. Conductive filament formation is an electrochemical process that requires the transport of a metal through or across a nonmetallic medium under the influence of an applied electric field. With the advent of lead-free initiatives, boards are being exposed to higher temperatures during lead-free solder processing. This can weaken the glass-fiber bonding, thus enhancing conductive filament formation. The effect of the inclusion of halogen-free flame retardants on conductive filament formation in printed circuit boards is also not completely understood. Previous studies, along with analysis and examinations conducted on printed circuit boards with failure sites that were due to conductive filament formation, have shown that the conductive path is typically formed along the delaminated fiber glass and epoxy resin interfaces. This paper is a result of a year-long study on the effects of reflow temperatures, halogen-free flame retardants, glass reinforcement weave style, and conductor spacing on times to failure due to conductive filament formation.

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

2021 ◽  
Author(s):  
Kazuto Mizutani ◽  
Takuya HOSHII ◽  
Hitoshi WAKABAYASHI ◽  
Kazuo TSUTSUI ◽  
Edward Yi Chang ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Transformation ◽  
Cerium Oxide ◽  
Remnant Polarization ◽  
Ferroelectric Phase ◽  
Filament Formation ◽  
Conductive Filament ◽  
Phase Stabilization ◽  
Different Temperatures ◽  
Ferroelectric Switching

Abstract The effects of 1-nm-thick CeOx capping on 7.5-nm-thick Y-doped HfO2 films on the ferroelectric characteristics are investigated. From the ferroelectric characteristics of the samples annealed at different temperatures from 450 to 600oC and annealing durations, the time (τ) required to stabilize the ferroelectric phase at each temperature was shortened by the capping. The identical activation energy (Ea) of 2.65 eV for ferroelectric stabilization without and with capping suggests the same kinetics for phase transformation. However, an increase in the remnant polarization (Pr) was obtained. Only a few Ce atoms diffused into the underlying HfO2 film even after 600oC annealing. Ferroelectric switching tests revealed an improvement in endurance from 107 to 1010 by the capping, presumably owing to the suppression of conductive filament formation. Therefore, CeOx capping is effective in promoting the ferroelectric phase in HfO2 with high switching endurance.

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts

Nano Letters ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 4390-4399 ◽  
Author(s):  
Kechao Tang ◽  
Andrew C. Meng ◽  
Fei Hui ◽  
Yuanyuan Shi ◽  
Trevor Petach ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Liquid Electrolyte ◽  
Resistance Switching ◽  
Filament Formation ◽  
Conductive Filament
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