scholarly journals A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

AIP Advances ◽  
2015 ◽  
Vol 5 (8) ◽  
pp. 087123 ◽  
Author(s):  
Ahmad Faraz ◽  
Nitin Deepak ◽  
Michael Schmidt ◽  
Martyn E. Pemble ◽  
Lynette Keeney
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Ferroelectric Properties ◽  
High Density ◽  
Lead Free ◽  
Aurivillius Phase ◽  
Perovskite Material ◽  
Memory Applications

Dependence of Ferroelectric Properties of SBT Based Capacitors on the Electrode Material

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Tirumala ◽  
S. O. Ryu ◽  
K. B. Lee ◽  
R. Vedula ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrode Material ◽  
Electrode Materials ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Sputter Deposited ◽  
Memory Applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Memory Devices ◽  
Leakage Currents ◽  
Fatigue Characteristics ◽  
Ferroelectric Memory ◽  
Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

2021 ◽  
Vol 21 (4) ◽  
pp. 2681-2686
Author(s):  
Nguyen Ngoc Minh ◽  
Bui Van Dan ◽  
Nguyen Duc Minh ◽  
Guus Rijnders ◽  
Ngo Duc Quan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Chemical Solution ◽  
Ferroelectric Films ◽  
Solution Deposition ◽  
Si Substrates ◽  
Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

Frequency and temperature dependence of dielectric and electrical properties of radio-frequency sputtered lead-free K0.48Na0.52NbO3 thin films

2010 ◽  
Vol 518 (22) ◽  
pp. 6390-6393 ◽  
Author(s):  
Jin Soo Kim ◽  
Hai Joon Lee ◽  
Sun Young Lee ◽  
Ill Won Kim ◽  
Su Dae Lee
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Radio Frequency ◽  
Temperature Dependence ◽  
Lead Free

Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films

1997 ◽  
Vol 17 (1-4) ◽  
pp. 57-65 ◽  
Author(s):  
Takehiro Noguchi ◽  
Takashi Hase ◽  
Yoichi Miyasaka
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Ferroelectric Properties

Electromechanical Properties of Ferroelectric Thin Films for Piezoelectric MEMS Applications

2006 ◽  
Vol 45 ◽  
pp. 2422-2431
Author(s):  
Hiroshi Maiwa
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Scanning Probe Microscopy ◽  
Microelectromechanical Systems ◽  
Lead Toxicity ◽  
Scanning Probe ◽  
Lead Free ◽  
Electromechanical Properties ◽  
Solution Deposition ◽  
Pzt Film

Piezoelectric microelectromechanical systems (MEMS) employing ferrroelectric thin films have been extensively studied. In this paper, materials issues of the piezoeletric films are presented. Temperature dependence of the electrical and electromechanical properties of Pb(ZrxTi1-x)O3 (PZT, x= 0.3, 0.52, and 0.7) thin films were measured using scanning probe microscopy in the temperature range from -100°C to 150°C. The field-induced displacement increased with increase of the temperature; however, their temperature dependence was relatively small, compared with that reported on bulk PZT ceramics. Thus far, the use of PZT film has been most widely studied for MEMS applications. However, the lead toxicity associated with PZT and other lead oxide-based ferroelectrics is problematic. Therefore, properties of the lead-free thin film piezoelectrics are also described in this paper. As candidate for the lead-free piezoelectrics, Bi4-xNdxTi3O12 (BNT) and Ba(Zr0.2Ti0.8)O3 (BZT) thin films are chosen. BNT and BZT films prepared by chemical solution deposition exhibit field-induced strain corresponding to 38 pm/V and 35 pm/V, respectively.

Composition Dependence of Dielectric Anomaly in Strontium Bismuth Tantalate Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Koichi Takemura ◽  
Takehiro Noguchi ◽  
Takashi Hase ◽  
Hidekazu Kimura ◽  
Yoichi Miyasaka
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Local Structure ◽  
Remanent Polarization ◽  
Composition Dependence ◽  
Lattice Structure ◽  
Ferroelectric Properties ◽  
Dielectric Anomaly ◽  
Strontium Bismuth Tantalate ◽  
First Order

AbstractEffects of off-stoichiometry and Nb substitution on the dielectric anomaly and ferroelectric properties have been investigated for SrBi2Ta2O9(SBT) thin films. Local atomic environment for the stoichiometric and off-stoichiometric SBT films has been also measured. The features of the dielectric anomaly, the Curie temperature (Tc), and the temperature dependence of the spontaneous polarization (Ps) are independent of the film thickness, and are governed by the nature of the crystal. For the stoichiometric Sr content SBT films, the grain size increases and the temperature dependence of the remanent polarization (Pr) decreases with increasing thickness. For the films with Sr/Bi/Ta = 0.8/2/2 and 0.8/2.2/2, Sr deficient local structure was observed, and such lattice structure probably leads to higher Tc than the stoichiometric crystal. Nb substitution for Ta also raises Tc, and makes the dielectric anomaly sharper. The phase transition associated with the dielectric anomaly for these films is thought to be first-order.

Enhanced ferroelectric properties of LiNbO3 substituted Na0.5K0.5NbO3 lead-free thin films grown by chemical solution deposition

2008 ◽  
Vol 93 (21) ◽  
pp. 212905 ◽  
Author(s):  
Chang Won Ahn ◽  
Euh Duck Jeong ◽  
Sun Young Lee ◽  
Hai Joon Lee ◽  
Sun Hee Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Chemical Solution ◽  
Solution Deposition
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